Memristor Array Based on Wafer-Scale 2D HfS2 for Dual-Mode Physically Unclonable Functions

IF 8.3 2区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

ACS Applied Materials & Interfaces Pub Date : 2024-11-13 DOI:10.1021/acsami.4c11340

Haofei Zheng, Lingqi Li, Yu-Chieh Chien, Jie Yang, Sifan Li, Samarth Jain, Heng Xiang, Mingxi Chen, Jianwei Chai, Yinfeng Long, Mei Er Pam, Lin Wang, Dongzhi Chi, Kah-Wee Ang

{"title":"Memristor Array Based on Wafer-Scale 2D HfS2 for Dual-Mode Physically Unclonable Functions","authors":"Haofei Zheng, Lingqi Li, Yu-Chieh Chien, Jie Yang, Sifan Li, Samarth Jain, Heng Xiang, Mingxi Chen, Jianwei Chai, Yinfeng Long, Mei Er Pam, Lin Wang, Dongzhi Chi, Kah-Wee Ang","doi":"10.1021/acsami.4c11340","DOIUrl":null,"url":null,"abstract":"Conventional Si-based physically unclonable functions (PUFs) take advantage of the unique variations in the fabrication processes. However, these PUFs are hindered by limited entropy sources and susceptibility to noise interference. Here we present a memristive device based on wafer-scale (2-in.) two-dimensional (2D) hafnium disulfide (HfS<sub>2</sub>) grown by molecular beam epitaxy (MBE). The polycrystalline HfS<sub>2</sub> thin film can offer enhanced entropy sources for PUF applications, such as lattice defects, which can facilitate the random formation of conductive filaments and result in significant device-to-device (D2D) variations. Our proposed PUF design seamlessly integrates two distinct operating modes within a single circuit module. First, a reconfigurable and highly secure mode 1, and second, an ultrareliable mode 2, both with near-ideal Entropy (∼1.0), normalized Hamming distance (∼0.5) and correlation coefficient (∼0.0). Additionally, a predictive Fourier regression model further confirms the unpredictable nature of our dual-mode PUF, with an average prediction accuracy of ∼50%.","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":null,"pages":null},"PeriodicalIF":8.3000,"publicationDate":"2024-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Materials & Interfaces","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1021/acsami.4c11340","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

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Abstract

Conventional Si-based physically unclonable functions (PUFs) take advantage of the unique variations in the fabrication processes. However, these PUFs are hindered by limited entropy sources and susceptibility to noise interference. Here we present a memristive device based on wafer-scale (2-in.) two-dimensional (2D) hafnium disulfide (HfS₂) grown by molecular beam epitaxy (MBE). The polycrystalline HfS₂ thin film can offer enhanced entropy sources for PUF applications, such as lattice defects, which can facilitate the random formation of conductive filaments and result in significant device-to-device (D2D) variations. Our proposed PUF design seamlessly integrates two distinct operating modes within a single circuit module. First, a reconfigurable and highly secure mode 1, and second, an ultrareliable mode 2, both with near-ideal Entropy (∼1.0), normalized Hamming distance (∼0.5) and correlation coefficient (∼0.0). Additionally, a predictive Fourier regression model further confirms the unpredictable nature of our dual-mode PUF, with an average prediction accuracy of ∼50%.

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基于晶圆级二维 HfS2 的 Memristor 阵列，可实现双模物理不可克隆功能

传统的硅基物理不可克隆功能（PUF）利用了制造工艺中的独特变化。然而，这些 PUF 受限于有限的熵源和易受噪声干扰的影响。在这里，我们展示了一种基于分子束外延（MBE）生长的晶圆级（2 英寸）二维（2D）二硫化钼（HfS2）的记忆器件。多晶 HfS2 薄膜可以为 PUF 应用提供增强的熵源，例如晶格缺陷，它可以促进导电丝的随机形成，并导致显著的器件到器件 (D2D) 变化。我们提出的 PUF 设计在单个电路模块中无缝集成了两种不同的工作模式。首先是可重新配置的高度安全模式 1，其次是超可靠模式 2，两者都具有接近理想的熵值 (∼1.0)、归一化汉明距离 (∼0.5)和相关系数 (∼0.0)。此外，预测性傅立叶回归模型进一步证实了我们的双模 PUF 的不可预测性，其平均预测准确率为 50%。

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来源期刊

ACS Applied Materials & Interfaces 工程技术-材料科学：综合

CiteScore

16.00

自引率

6.30%

发文量

4978

审稿时长

1.8 months

期刊介绍： ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.