Y. H. Li, Y. Dong, G. W. Xu, Y. Z. Bu, Q. L. Sai, H. J. Qi, S. B. Long, Z. Q. Chen, B. J. Ye, H. J. Zhang
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Zhang","doi":"10.1103/physrevb.110.174106","DOIUrl":null,"url":null,"abstract":"The conductive properties and defect structure of Sn-doped <mjx-container ctxtmenu_counter=\"13\" ctxtmenu_oldtabindex=\"1\" jax=\"CHTML\" overflow=\"linebreak\" role=\"tree\" sre-explorer- style=\"font-size: 100.7%;\" tabindex=\"0\"><mjx-math data-semantic-structure=\"(10 0 1 (9 (4 2 3) 8 (7 5 6)))\"><mjx-mrow data-semantic-children=\"0,9\" data-semantic-content=\"1\" data-semantic- data-semantic-owns=\"0 1 9\" data-semantic-role=\"subtraction\" data-semantic-speech=\"beta minus upper G a 2 normal upper O 3\" data-semantic-type=\"infixop\"><mjx-mi data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"italic\" data-semantic- data-semantic-parent=\"10\" data-semantic-role=\"greekletter\" data-semantic-type=\"identifier\"><mjx-c>𝛽</mjx-c></mjx-mi><mjx-mtext data-semantic-annotation=\"general:text\" data-semantic- data-semantic-operator=\"infixop,−\" data-semantic-parent=\"10\" data-semantic-role=\"subtraction\" data-semantic-type=\"operator\" style='font-family: MJX-STX-ZERO, \"Helvetica Neue\", Helvetica, Roboto, Arial, sans-serif;'><mjx-utext style=\"font-size: 90.6%; padding: 0.828em 0px 0.221em; width: 7px;\" variant=\"-explicitFont\">−</mjx-utext></mjx-mtext><mjx-mrow data-semantic-added=\"true\" data-semantic-annotation=\"clearspeak:unit\" data-semantic-children=\"4,7\" data-semantic-content=\"8\" data-semantic- data-semantic-owns=\"4 8 7\" data-semantic-parent=\"10\" data-semantic-role=\"implicit\" data-semantic-type=\"infixop\" space=\"2\"><mjx-msub data-semantic-children=\"2,3\" data-semantic- data-semantic-owns=\"2 3\" data-semantic-parent=\"9\" data-semantic-role=\"unknown\" data-semantic-type=\"subscript\"><mjx-mi data-semantic-font=\"normal\" data-semantic- data-semantic-parent=\"4\" data-semantic-role=\"unknown\" data-semantic-type=\"identifier\"><mjx-c noic=\"true\" style=\"padding-top: 0.669em;\">G</mjx-c><mjx-c style=\"padding-top: 0.669em;\">a</mjx-c></mjx-mi><mjx-script style=\"vertical-align: -0.15em;\"><mjx-mn data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"normal\" data-semantic- data-semantic-parent=\"4\" data-semantic-role=\"integer\" data-semantic-type=\"number\" size=\"s\"><mjx-c>2</mjx-c></mjx-mn></mjx-script></mjx-msub><mjx-mo data-semantic-added=\"true\" data-semantic- data-semantic-operator=\"infixop,\" data-semantic-parent=\"9\" data-semantic-role=\"multiplication\" data-semantic-type=\"operator\"><mjx-c></mjx-c></mjx-mo><mjx-msub data-semantic-children=\"5,6\" data-semantic- data-semantic-owns=\"5 6\" data-semantic-parent=\"9\" data-semantic-role=\"latinletter\" data-semantic-type=\"subscript\" space=\"2\"><mjx-mi data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"normal\" data-semantic- data-semantic-parent=\"7\" data-semantic-role=\"latinletter\" data-semantic-type=\"identifier\"><mjx-c>O</mjx-c></mjx-mi><mjx-script style=\"vertical-align: -0.15em;\"><mjx-mn data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"normal\" data-semantic- data-semantic-parent=\"7\" data-semantic-role=\"integer\" data-semantic-type=\"number\" size=\"s\"><mjx-c>3</mjx-c></mjx-mn></mjx-script></mjx-msub></mjx-mrow></mjx-mrow></mjx-math></mjx-container> bulk materials with different Sn concentrations are studied in this work. The calculations and experiments of positron annihilation spectroscopy clarify the existence of Ga monovacancies of high concentrations in these semiconductors. The temperature dependencies of positron annihilation parameters and the linear relationship between compensating carrier concentration and Ga vacancy concentration clearly reveal that the <mjx-container ctxtmenu_counter=\"14\" ctxtmenu_oldtabindex=\"1\" jax=\"CHTML\" overflow=\"linebreak\" role=\"tree\" sre-explorer- style=\"font-size: 100.7%;\" tabindex=\"0\"><mjx-math data-semantic-annotation=\"clearspeak:simple\" data-semantic-children=\"1\" data-semantic-content=\"0\" data-semantic- data-semantic-owns=\"0 1\" data-semantic-role=\"negative\" data-semantic-speech=\"negative 3\" data-semantic-structure=\"(2 0 1)\" data-semantic-type=\"prefixop\"><mjx-mo data-semantic- data-semantic-operator=\"prefixop,−\" data-semantic-parent=\"2\" data-semantic-role=\"subtraction\" data-semantic-type=\"operator\"><mjx-c>−</mjx-c></mjx-mo><mjx-mn data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"normal\" data-semantic- data-semantic-parent=\"2\" data-semantic-role=\"integer\" data-semantic-type=\"number\"><mjx-c>3</mjx-c></mjx-mn></mjx-math></mjx-container> charged Ga monovacancies are the dominant intrinsic acceptors in Sn-doped <mjx-container ctxtmenu_counter=\"15\" ctxtmenu_oldtabindex=\"1\" jax=\"CHTML\" overflow=\"linebreak\" role=\"tree\" sre-explorer- style=\"font-size: 100.7%;\" tabindex=\"0\"><mjx-math data-semantic-structure=\"(10 0 1 (9 (4 2 3) 8 (7 5 6)))\"><mjx-mrow data-semantic-children=\"0,9\" data-semantic-content=\"1\" data-semantic- data-semantic-owns=\"0 1 9\" data-semantic-role=\"subtraction\" data-semantic-speech=\"beta minus upper G a 2 normal upper O 3\" data-semantic-type=\"infixop\"><mjx-mi data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"italic\" data-semantic- data-semantic-parent=\"10\" data-semantic-role=\"greekletter\" data-semantic-type=\"identifier\"><mjx-c>𝛽</mjx-c></mjx-mi><mjx-mtext data-semantic-annotation=\"general:text\" data-semantic- data-semantic-operator=\"infixop,−\" data-semantic-parent=\"10\" data-semantic-role=\"subtraction\" data-semantic-type=\"operator\" style='font-family: MJX-STX-ZERO, \"Helvetica Neue\", Helvetica, Roboto, Arial, sans-serif;'><mjx-utext style=\"font-size: 90.6%; padding: 0.828em 0px 0.221em; width: 7px;\" variant=\"-explicitFont\">−</mjx-utext></mjx-mtext><mjx-mrow data-semantic-added=\"true\" data-semantic-annotation=\"clearspeak:unit\" data-semantic-children=\"4,7\" data-semantic-content=\"8\" data-semantic- data-semantic-owns=\"4 8 7\" data-semantic-parent=\"10\" data-semantic-role=\"implicit\" data-semantic-type=\"infixop\" space=\"2\"><mjx-msub data-semantic-children=\"2,3\" data-semantic- data-semantic-owns=\"2 3\" data-semantic-parent=\"9\" data-semantic-role=\"unknown\" data-semantic-type=\"subscript\"><mjx-mi data-semantic-font=\"normal\" data-semantic- data-semantic-parent=\"4\" data-semantic-role=\"unknown\" data-semantic-type=\"identifier\"><mjx-c noic=\"true\" style=\"padding-top: 0.669em;\">G</mjx-c><mjx-c style=\"padding-top: 0.669em;\">a</mjx-c></mjx-mi><mjx-script style=\"vertical-align: -0.15em;\"><mjx-mn data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"normal\" data-semantic- data-semantic-parent=\"4\" data-semantic-role=\"integer\" data-semantic-type=\"number\" size=\"s\"><mjx-c>2</mjx-c></mjx-mn></mjx-script></mjx-msub><mjx-mo data-semantic-added=\"true\" data-semantic- data-semantic-operator=\"infixop,\" data-semantic-parent=\"9\" data-semantic-role=\"multiplication\" data-semantic-type=\"operator\"><mjx-c></mjx-c></mjx-mo><mjx-msub data-semantic-children=\"5,6\" data-semantic- data-semantic-owns=\"5 6\" data-semantic-parent=\"9\" data-semantic-role=\"latinletter\" data-semantic-type=\"subscript\" space=\"2\"><mjx-mi data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"normal\" data-semantic- data-semantic-parent=\"7\" data-semantic-role=\"latinletter\" data-semantic-type=\"identifier\"><mjx-c>O</mjx-c></mjx-mi><mjx-script style=\"vertical-align: -0.15em;\"><mjx-mn data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"normal\" data-semantic- data-semantic-parent=\"7\" data-semantic-role=\"integer\" data-semantic-type=\"number\" size=\"s\"><mjx-c>3</mjx-c></mjx-mn></mjx-script></mjx-msub></mjx-mrow></mjx-mrow></mjx-math></mjx-container>.","PeriodicalId":20082,"journal":{"name":"Physical Review B","volume":"196 1","pages":""},"PeriodicalIF":3.7000,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physical Review B","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1103/physrevb.110.174106","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"Physics and Astronomy","Score":null,"Total":0}
引用次数: 0
Abstract
The conductive properties and defect structure of Sn-doped 𝛽−Ga2O3 bulk materials with different Sn concentrations are studied in this work. The calculations and experiments of positron annihilation spectroscopy clarify the existence of Ga monovacancies of high concentrations in these semiconductors. The temperature dependencies of positron annihilation parameters and the linear relationship between compensating carrier concentration and Ga vacancy concentration clearly reveal that the −3 charged Ga monovacancies are the dominant intrinsic acceptors in Sn-doped 𝛽−Ga2O3.
期刊介绍：
Physical Review B (PRB) is the world’s largest dedicated physics journal, publishing approximately 100 new, high-quality papers each week. The most highly cited journal in condensed matter physics, PRB provides outstanding depth and breadth of coverage, combined with unrivaled context and background for ongoing research by scientists worldwide.
PRB covers the full range of condensed matter, materials physics, and related subfields, including:
-Structure and phase transitions
-Ferroelectrics and multiferroics
-Disordered systems and alloys
-Magnetism
-Superconductivity
-Electronic structure, photonics, and metamaterials
-Semiconductors and mesoscopic systems
-Surfaces, nanoscience, and two-dimensional materials
-Topological states of matter
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