A Compact DC Model for PEDOT-Based Organic Electrochemical Transistors (OECTs)

IF 2.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Benito González;Laia Masip;Marc Lázaro;Ramón Villarino;David Girbau;Antonio Lázaro
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引用次数: 0

Abstract

In this article, a compact model of the dc characteristics of organic electrochemical transistors (OECTs) is proposed. Starting from the output characteristics, the transconductance in the saturation regime is modeled after the output conductance in the saturation regime is reduced to very low values. For this purpose, a previously justified integrable bell-shaped function is used, based on which the transfer characteristics in the saturation regime are determined. Since the drain current due to hopping diminishes in the linear regime, the model is based on the gradual channel approximation and constant hole mobility and gate capacitance at this regime. Six parameters are required for dc modeling, which can be obtained in a straightforward way from the transconductance and transfer characteristics in the saturation regime, and the output characteristics. A good agreement between the modeled and measured data is achieved. The proposed compact model stands out in terms of its simplicity and rapid determination of its parameters and can be easily incorporated into circuit simulators.
基于 PEDOT 的有机电化学晶体管 (OECT) 的紧凑型直流模型
本文提出了有机电化学晶体管(OECT)直流特性的简洁模型。从输出特性出发,在饱和状态下的输出电导降低到极低值后,对饱和状态下的跨导进行建模。为此,我们使用了先前证明合理的可积分钟形函数,并在此基础上确定了饱和状态下的传输特性。由于跳变引起的漏极电流在线性状态下会减小,因此该模型基于渐进沟道近似以及该状态下的恒定孔迁移率和栅极电容。直流建模需要六个参数,这些参数可以通过饱和状态下的跨导和传输特性以及输出特性直接获得。建模数据与测量数据之间达到了良好的一致性。所提出的紧凑型模型因其简单性和参数的快速确定而脱颖而出,可以轻松地集成到电路模拟器中。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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