Growth of copper single crystal using cone die Czochralski method

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2024-10-20 DOI:10.1016/j.jcrysgro.2024.127957

Kazuya Takahashi , Tsuyoshi Kumagai , Marilou Cadatal-Raduban , Nobuhiko Sarukura , Toru Kawamata , Kazumasa Sugiyama , Tsuguo Fukuda

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引用次数: 0

Abstract

Copper (Cu) and other metal single crystals are useful as substrates for the deposition of atomic layer materials for many electronic applications, but the growth of large-sized single crystals is difficult to achieve. Characteristics of the metal material, namely seed elongation and intense cooling radiation at high temperatures during crystal growth, are the main challenges encountered when growing ingots with large diameters. These problems can be resolved by optimizing the crystal growth parameters. By adjusting the shoulder formation angle of the ingot shape to approximately 20° to 40°, we are able to grow a large (1-inch diameter, 30 mm length) single crystal of metal Cu using the Czochralski (CZ) method. However, the generation of suspended solids and film impurities such as reactants and precipitates and their nucleation, growth, and solidification, limited the further increase in size of the Cu crystal. Using the cone-shape die CZ (CD-CZ) method solves this problem and a 2-inch diameter Cu single crystal is successfully grown. This is the world’s largest single crystal metal grown using this method and it paves the way for the growth of other metal crystals.

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利用锥模 Czochralski 法生长铜单晶体

铜（Cu）和其他金属单晶是许多电子应用中原子层材料沉积的有用基底，但大尺寸单晶的生长很难实现。金属材料的特性，即晶体生长过程中的种子伸长和高温下的强烈冷却辐射，是生长大直径铸锭时遇到的主要挑战。这些问题可以通过优化晶体生长参数来解决。通过将铸锭形状的晶肩形成角调整到大约 20° 至 40°，我们能够利用 Czochralski（CZ）方法生长出金属铜的大型（直径 1 英寸，长度 30 毫米）单晶体。然而，悬浮固体和薄膜杂质（如反应物和沉淀物）的产生及其成核、生长和凝固限制了铜晶体尺寸的进一步增大。使用锥形模 CZ（CD-CZ）方法解决了这一问题，并成功生长出直径为 2 英寸的铜单晶体。这是世界上使用这种方法培育出的最大单晶金属，为培育其他金属晶体铺平了道路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.