Optimizing single crystal diamond mosaic growth: A study on seed thickness variation and pre-growth treatment

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2024-10-19 DOI:10.1016/j.jcrysgro.2024.127953

Kai Li, Jun Zhang, Peicheng Mo, Jiarong Chen, Xiaoyi Pan, Chao Chen

引用次数: 0

Abstract

The limitations on the size of single-crystal diamond applications still need to be addressed for practical use. This study systematically investigates the impact of variations in seed crystal thickness and pre-growth treatments on step bonding, defect formation, and stress distribution in the mosaic growth of single-crystal diamond films. The findings suggest that variations in seed crystal thickness within 50 μm result in a smooth mosaic junction and high crystal quality, while a 100 μm variation results in noticeable defects and stress concentrations, hindering adequate bonding. Pre-growth treatment improves crystal quality by reducing polycrystalline formations and stress concentrations. Optical microscopy and Raman mapping confirm that pre-growth treated mosaic regions exhibit smooth steps and seamless bonding, with FWHM values between 3 and 5 cm⁻¹, consistent with the quality of non-mosaic growth regions.

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优化单晶金刚石镶嵌生长：种子厚度变化和生长前处理研究

在实际应用中，单晶金刚石的尺寸限制仍有待解决。本研究系统研究了单晶金刚石薄膜镶嵌生长过程中，籽晶厚度和生长前处理的变化对阶跃结合、缺陷形成和应力分布的影响。研究结果表明，籽晶厚度在 50 μm 以内的变化会导致平滑的镶嵌交界和较高的晶体质量，而 100 μm 的变化则会导致明显的缺陷和应力集中，从而阻碍充分的结合。生长前处理可减少多晶体形成和应力集中，从而提高晶体质量。光学显微镜和拉曼图谱证实，经过预生长处理的镶嵌区域表现出平滑的阶梯和无缝结合，FWHM 值在 3 到 5 cm-1 之间，与非镶嵌生长区域的质量一致。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.