Investigation of Electrical Characteristics on SiC MOSFET and JBS-Integrated MOSFET at Cryogenic Temperatures

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2024-10-08 DOI:10.1109/TED.2024.3467211

Zhaoyuan Gu;Mingchao Yang;Yi Yang;Weihua Liu;Chuanyu Han;Xin Li;Li Geng;Yue Hao

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Abstract

In this article, a 1.2-kV conventional MOSFET and a MOSFET integrated with a junction barrier Schottky diode (JBSFET) were fabricated with a consistent process flow. The electrical characteristics of MOSFET and JBSFET, including static performance, structural capacitance, and switching performance have been systematically analyzed in the temperature range of 80–300 K. Experimental results show that the third quadrant voltage drop of JBSFET is smaller than MOSFET and hardly changes with decreasing temperature. The gate-drain capacitance of MOSFET and JBSFET increases by more than 50% at 80 K, due to the cryogenic incomplete ionization of the P-Base. The switching performance of the two devices is affected by the temperature dependence of threshold voltage, structural capacitance, and interface state charges, manifesting in a reduction in turn-on speed and voltage tailing at cryogenic temperatures. According to the results, JBSFET has better potential for low-temperature applications due to its stable third-quadrant characteristics. The cryogenic incomplete ionization of the P-Base region has a significant impact on the output characteristics, structural capacitance, and switching performance.

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低温条件下 SiC MOSFET 和 JBS 集成 MOSFET 的电气特性研究

本文采用一致的工艺流程制造了 1.2 kV 传统 MOSFET 和集成了结势垒肖特基二极管 (JBSFET) 的 MOSFET。实验结果表明，JBSFET 的第三象限压降小于 MOSFET，且几乎不随温度的降低而变化。MOSFET 和 JBSFET 的栅漏电容在 80 K 时增加了 50%以上，这是由于 P 基底的低温不完全电离造成的。这两种器件的开关性能受阈值电压、结构电容和界面态电荷的温度依赖性影响，表现为在低温条件下导通速度降低和电压拖尾。根据研究结果，JBSFET 因其稳定的第三象限特性，在低温应用中具有更好的潜力。P 基底区的低温不完全电离对输出特性、结构电容和开关性能有重大影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.