Narrow Dual-Band Photodetector Based on Cs2AgBiBr6 Lead-Free Double Perovskite Single Crystal

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2024-09-24 DOI:10.1109/TED.2024.3457548

Sampati Rao Sridhar;Naveen Kumar Tailor;Soumitra Satapathi;Brijesh Kumar

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引用次数: 0

Abstract

Narrowband photodetectors play a vital role in imaging and sensing applications. Due to exceptional optoelectronic properties and tunable bandgap, perovskites are highly suitable for realizing narrowband photodetection. In this work, a narrow dual-band photodetector based on lead-free perovskite single crystal (PSC) Cs2AgBiBr6 is fabricated. The detector showed a narrowband response spectrum with dual bands with a peak response at 530 and 590 nm. A detectivity of 109 Jones with a full-width half maximum (FWHM) of 42 nm is achieved in both bands. The detector showed a rise time (

${t}_{\text {r}}$

) of 92 ms and a fall time (

${t}_{\text {f}}$

) of 271 ms under 530 nm illumination, along with a stable performance up to 25 days in ambient conditions. This attempt demonstrates a stable narrow dual-band photodetection using a lead-free Cs2AgBiBr6 double PSC for multispectral imaging applications.

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基于 Cs2AgBiBr6 无铅双包晶单晶的窄双波段光电探测器

窄带光电探测器在成像和传感应用中发挥着至关重要的作用。由于具有优异的光电特性和可调带隙，包晶非常适合实现窄带光电探测。在这项研究中，我们制作了一种基于无铅包晶单晶（PSC）Cs2AgBiBr6 的窄双波段光电探测器。该探测器显示出窄带响应光谱，在 530 纳米和 590 纳米处具有双波段峰值响应。两个波段的检测率均为 109 Jones，全宽半最大值（FWHM）均为 42 nm。在 530 纳米光照下，探测器的上升时间（{t}_{text {r}}$）为 92 毫秒，下降时间（{t}_{text {f}}$）为 271 毫秒，并且在环境条件下性能稳定达 25 天。这一尝试展示了使用无铅 Cs2AgBiBr6 双 PSC 进行多光谱成像应用的稳定窄双波段光电探测。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.