Skipper-in-CMOS: Nondestructive Readout With Subelectron Noise Performance for Pixel Detectors

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2024-10-01 DOI:10.1109/TED.2024.3463631

Agustin J. Lapi;Miguel Sofo-Haro;Benjamin C. Parpillon;Adi Birman;Guillermo Fernandez-Moroni;Lorenzo Rota;Fabricio Alcalde Bessia;Aseem Gupta;Claudio R. Chavez Blanco;Fernando Chierchie;Julie Segal;Christopher J. Kenney;Angelo Dragone;Shaorui Li;Davide Braga;Amos Fenigstein;Juan Estrada;Farah Fahim

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引用次数: 0

Abstract

The Skipper-in-CMOS image sensor integrates the nondestructive readout capability of skipper charge coupled devices (Skipper-CCDs) with the high conversion gain of a pinned photodiode (PPD) in a CMOS imaging process while taking advantage of in-pixel signal processing. This allows both single photon counting as well as high frame rate readout through highly parallel processing. The first results obtained from a

${15} \times {15}~\mu $

m2 pixel cell of a Skipper-in-CMOS sensor fabricated in Tower Semiconductor’s commercial 180-nm CMOS image sensor process are presented. Measurements confirm the expected reduction of the readout noise with the number of samples down to deep subelectron noise of

$0.15\text {e}^ - $

, demonstrating the charge transfer operation from the PPD and the single photon counting operation when the sensor is exposed to light. This article also discusses new testing strategies employed for its operation and characterization.

查看原文本刊更多论文

Skipper-in-CMOS：为像素检测器提供具有亚电子噪声性能的无损读出功能

Skipper-in-CMOS 图像传感器在 CMOS 成像工艺中集成了 Skipper 电荷耦合器件（Skipper-CCD）的无损读出功能和针式光电二极管（PPD）的高转换增益，同时利用了像素内信号处理的优势。这样就可以通过高度并行处理实现单光子计数和高帧频读出。从一个 ${15}\m2 的 Skipper-in-CMOS 传感器像素单元所获得的首批结果，该传感器采用塔式半导体公司的商用 180 纳米 CMOS 图像传感器工艺制造。测量结果表明，随着采样数量的增加，读出噪声有望降低到 0.15text {e}^ - $ 的深亚电子噪声，这证明了当传感器暴露在光线下时，PPD 的电荷转移操作和单光子计数操作。本文还讨论了在其运行和表征过程中采用的新测试策略。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.