CuO and MoS₂ Nanocomposite-Based High-Performance Wideband Photodetector

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2024-10-02 DOI:10.1109/TED.2024.3462657

Tulika Bajpai;Ajay Kumar Dwivedi;Saumya Tripathi;Lucky Agrawal;Shweta Tripathi

引用次数: 0

Abstract

This article reports an aluminum (Al)/copper oxide (CuO):molybdenum disulfide (MoS2)/indium tin oxide (ITO)-coated polyethylene terephthalate (PET) structure-based broadband photodetector (PD). In the device, CuO:MoS2 nanocomposite prepared through the dispersion method acts as an active layer. The spin coating technique was employed to deposit the nanocomposite film upon ITO-coated PET, followed by the Al contacts deposition by means of a thermal evaporation unit. The fabricated PD shows a broadband response with maximum responsivity

${R}_{S}{R}_{S}$

(A/W) of 1.23, 289.08, and 217.58 A/W at 300 nm (UV), 550 nm (visible), and 850 nm (IR) for −1 V bias at a fixed optical power of

$0.118~\mu $

W. For optoelectronic applications, the CuO:MoS2 nanocomposite exhibits promising properties.

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基于氧化铜和 MoS₂ 纳米复合材料的高性能宽带光电探测器

本文报告了一种基于铝（Al）/氧化铜（CuO）：二硫化钼（MoS2）/氧化铟锡（ITO）涂层聚对苯二甲酸乙二醇酯（PET）结构的宽带光电探测器（PD）。在该器件中，通过分散法制备的 CuO:MoS2 纳米复合材料充当了活性层。在 ITO 涂层 PET 上采用旋涂技术沉积纳米复合薄膜，然后通过热蒸发装置沉积铝触点。在固定光功率为 0.118~\mu $ W 时，当偏压为 -1 V 时，所制备的 PD 在 300 nm（紫外线）、550 nm（可见光）和 850 nm（红外线）波长范围内显示出宽带响应，最大响应率分别为 1.23、289.08 和 217.58 A/W ${R}_{S}{R}_{S}$（A/W）。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.