Graphene Field-Effect Transistors toward Study of Cardiac Ischemia at Early Stage

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Hanna Hlukhova, Dmitry Kireev, Andreas Offenhäusser, Denys Pustovyi, Svetlana Vitusevich
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引用次数: 0

Abstract

Ischemia and reperfusion states are studied in a network of cardiomyocytes as a part of real-state conditions of heart injuries and inflammations, specifically myocardial infractions. Arrays of graphene field-effect transistors (GFETs) fabricated in this work are used for extracellular recordings of ischemia states of cardiac cells during the external triggering of the ischemia infarction. The low-concentrated ischemic buffer solution allows to create a cell-stress condition resulting in the reperfusion process. The results show that the action potentials recorded with the graphene transistors, especially their shape, and duration of the active segment in measured extracellular action potentials, can be used to characterize the real state of the studied cardiac cell culture. The unique property of GFETs to detect such small changes in the action potential of cells in cardiac healthy and unhealthy states provides prospects for building the next generation of ultrasensitive biosensors, enabling the detection of acute ischemic states at an early stage.

Abstract Image

石墨烯场效应晶体管用于早期心脏缺血研究
心肌细胞网络中的缺血和再灌注状态是心脏损伤和炎症(特别是心肌梗塞)真实状态的一部分,对其进行了研究。这项工作中制作的石墨烯场效应晶体管(GFET)阵列用于在外部触发缺血梗塞时对心肌细胞的缺血状态进行细胞外记录。低浓度的缺血缓冲溶液可在再灌注过程中产生细胞应激状态。研究结果表明,用石墨烯晶体管记录的动作电位,特别是其形状和测量到的细胞外动作电位的活动段持续时间,可以用来描述所研究的心脏细胞培养的真实状态。石墨烯场效应晶体管能检测心脏健康和不健康状态下细胞动作电位的微小变化,这一独特特性为制造下一代超灵敏生物传感器提供了前景,使急性缺血状态的早期检测成为可能。
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来源期刊
Advanced Electronic Materials
Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
11.00
自引率
3.20%
发文量
433
期刊介绍: Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
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