Study of the physical nature of Mn4Si7 crystals formed by the diffusion method using an X-ray diffraction

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2024-10-10 DOI:10.1016/j.jcrysgro.2024.127932

B.D. Igamov , A.I. Kamardin , D.Kh. Nabiev , I.R. Bekpulatov , G.T. Imanova , T.S. Kamilov , A.S. Kasimov , N.E. Norbutaev

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Abstract

Mn₄Si₇ silicide crystals obtained by the diffusion method were studied using an X-ray diffractometer (XRD-6100) SHIMADZU. As a result of research, 14 peaks were identified in the Mn₄Si₇ crystal, corresponding to the database (COD-1530134).The size of Mn₄Si₇ silicide crystals (D_Diff) ranged from 6.2 × 10⁻¹⁰ m to 9.1 × 10⁻⁸ m, the lattice tension between crystal atoms (ε_Diff) from 0.31 to 3.71, the dislocation density on the surface (δ_Diff) varied in the range from 1 × 10¹¹ to 3.2 × 10¹⁴. It was found that the degree of crystallization of Mn₄Si₇ was 9.3 %, and the degree of amorphism reached 90.7 %. It has been established that the degree of crystallization of Mn₄Si₇ silicides is relatively low due to the fact that the Mn and Si atoms are non-stoichiometrically bonded to each other, and the degree of amorphism is high.

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利用 X 射线衍射法研究通过扩散法形成的 Mn4Si7 晶体的物理性质

使用岛津 X 射线衍射仪（XRD-6100）对通过扩散法获得的 Mn4Si7 硅化物晶体进行了研究。Mn4Si7 硅化物晶体的尺寸（DDiff）范围为 6.2 × 10-10 m 至 9.1 × 10-8 m，晶体原子间的晶格张力（εDiff）范围为 0.31 至 3.71，表面位错密度（δDiff）范围为 1 × 1011 至 3.2 × 1014。研究发现，Mn4Si7 的结晶度为 9.3%，非晶度达到 90.7%。由此可以确定，由于 Mn 原子和 Si 原子之间是非共价键，因此 Mn4Si7 硅化物的结晶度相对较低，而非晶度较高。

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.