SO3NH3 crystal growth in (CH3)3SBr solution

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2024-10-09 DOI:10.1016/j.jcrysgro.2024.127929

Bohui Xu , Pifu Gong , Zheshuai Lin

引用次数: 0

Abstract

SO₃NH₃ (Sulfamic acid, or SA) is known for its excellent piezoelectric and optical properties, making it valuable for various optical applications. However, it usually takes weeks to months to grow the SA single crystals with centimeter-scale size by traditional growth method from solution. In this study, we use (CH₃)₃SBr (Me₃SBr) as an additive to enhance the growth rate of SA single crystals, and the growth time was reduced to just 48 h. The mechanism of accelerated crystallization process is attributed to the variations of electrostatic potential and binding energy on SA crystal modified by the additive. In addition, structural analysis and basic characterization on the newly grown SA are performed, and first-principles calculations provide insights into the energy band structure and phonon spectrum.

查看原文本刊更多论文

SO3NH3 在 (CH3)3SBr 溶液中的晶体生长

SO3NH3（氨基磺酸，简称 SA）以其优异的压电和光学特性而闻名，因此在各种光学应用中具有重要价值。然而，采用传统的溶液生长法通常需要数周至数月的时间才能生长出厘米级大小的氨基磺酸单晶。本研究中，我们使用 (CH3)3SBr (Me3SBr) 作为添加剂来提高 SA 单晶的生长速度，并将生长时间缩短至 48 小时。加速结晶过程的机理是由于添加剂改变了 SA 晶体上的静电势和结合能。此外，还对新生长的 SA 进行了结构分析和基本表征，并通过第一原理计算深入了解了其能带结构和声子谱。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.