Study on the effects of strain and electrostatic doping on the magnetic anisotropy of GaN/VTe₂van der waals heterostructure.

IF 2.9 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Nanotechnology Pub Date : 2024-10-16 DOI:10.1088/1361-6528/ad8450

Junjun Xue, Wei Chen, Shanwen Hu, Zhouyu Chen, Haoyu Fang, Ting Zhi, Pengfei Shao, Qing Cai, Guofeng Yang, Yan Gu, Jin Wang, Dunjun Chen

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引用次数: 0

Abstract

Using a first-principles approach, this study delves into the effects of strain and electrostatic doping on the electronic and magnetic properties of the GaN/VTe₂van der Waals (vdW) heterostructure. The results reveal that when the GaN/VTe₂vdW heterostructure is doped with 0.1h/0.2hof electrostatic charge, its magnetization direction undergoes a remarkable reversal, shifting from out-of-plane orientation to in-plane direction. Therefore, we conduct a thorough investigation into the influence of electron orbitals on magnetic anisotropy energy. In addition, as the strain changes from -1% to 1%, the 100% spin polarization region of the GaN/VTe₂vdW heterostructure becomes smaller. It is worth noting that at a doping concentration of 0.1h, the GaN/VTe₂vdW heterostructure has a Curie temperature of 30 K above room temperature. This comprehensive study provides valuable insights and provides a reference for analyzing the electronic and magnetic properties of low-dimensional systems.

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应变和静电掺杂对 GaN/VTe2 范德华异质结构磁各向异性的影响研究。

本研究采用第一原理方法，深入探讨了应变和静电掺杂对 GaN/VTe2 范德瓦尔斯异质结构的电子和磁特性的影响。研究结果表明，当 GaN/VTe2 范德瓦尔斯异质结构掺杂 0.1h/0.2hof 静电荷时，其磁化方向会发生显著逆转，从面外方向转变为面内方向。因此，我们深入研究了电子轨道对磁各向异性能量的影响。此外，当应变从-1%变为1%时，GaN/VTe2vdW异质结构的100%自旋极化区域变小。值得注意的是，在掺杂浓度为 0.1h 时，GaN/VTe2vdW 异质结构的居里温度比室温高出 30 K。这项全面的研究提供了宝贵的见解，为分析低维系统的电子和磁性能提供了参考。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Nanotechnology 工程技术-材料科学：综合

CiteScore

7.10

自引率

5.70%

发文量

820

审稿时长

2.5 months

期刊介绍： The journal aims to publish papers at the forefront of nanoscale science and technology and especially those of an interdisciplinary nature. Here, nanotechnology is taken to include the ability to individually address, control, and modify structures, materials and devices with nanometre precision, and the synthesis of such structures into systems of micro- and macroscopic dimensions such as MEMS based devices. It encompasses the understanding of the fundamental physics, chemistry, biology and technology of nanometre-scale objects and how such objects can be used in the areas of computation, sensors, nanostructured materials and nano-biotechnology.