Numerically Efficient and Accurate Analytical Converter Semiconductor Loss Calculation for Hybrid and Modular Multilevel Converters in VSC-HVDC Applications

IF 3.3 Q3 ENERGY & FUELS
Levi Bieber;Liwei Wang;Juri Jatskevich
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引用次数: 0

Abstract

This paper outlines a method enabling the quick and accurate calculation of semiconductor conduction and switching losses of multilevel voltage-sourced converters. The proposed method needs only the equations defining the voltages and currents of the converter’s stacks of submodules and director switch valves to calculate the overall converter semiconductor losses, thereby accelerating the design cycle of novel converter topologies. For any defined operating point, the method quickly returns the semiconductor losses, making it straightforward to sweep across a converter’s range of operation, enabling quick comparison with other well-known, state-of-the-art converters. The method is derived for any generic multilevel converter, while examples of its application to the hybrid three-level converter, which is composed of both stacks and director switches, validate its accuracy. The method is further applied to the extended-overlap alternate-arm converter, also composed of stacks and director switches, providing further evidence of the method’s consistency. To validate the results, the semiconductor losses obtained from detailed simulations of a 600kV, 1GVA VSC-HVDC converter test system are compared against the proposed method, which demonstrate exceptional agreement. The relative errors in overall semiconductor losses between the simulation and the proposed method for the H3LC and EO-AAC are 0.76% and 0.94%, respectively.
针对 VSC-HVDC 应用中混合式和模块式多电平转换器的高效精确的转换器半导体损耗数值分析计算
本文概述了一种能够快速准确计算多电平电压源转换器半导体传导和开关损耗的方法。所提出的方法只需定义转换器子模块堆栈和导向开关阀的电压和电流方程,就能计算出整个转换器的半导体损耗,从而加快了新型转换器拓扑结构的设计周期。对于任何确定的工作点,该方法都能快速返回半导体损耗,从而可以直接扫描转换器的工作范围,与其他知名的先进转换器进行快速比较。该方法适用于任何通用多电平转换器,而应用于混合三电平转换器(由堆栈和导向开关组成)的实例则验证了该方法的准确性。该方法还进一步应用于同样由堆叠和导向开关组成的扩展重叠交替臂转换器,进一步证明了该方法的一致性。为了验证结果,将对 600kV、1GVA VSC-HVDC 换流器测试系统的详细模拟所获得的半导体损耗与所提出的方法进行了比较,结果显示两者非常一致。对于 H3LC 和 EO-AAC 而言,模拟和建议方法在整体半导体损耗方面的相对误差分别为 0.76% 和 0.94%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
CiteScore
7.80
自引率
5.30%
发文量
45
审稿时长
10 weeks
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