A compact 47–52-GHz power amplifier MMIC with output power of 20 W

IF 1 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Microwave and Optical Technology Letters Pub Date : 2024-09-22 DOI:10.1002/mop.34325

Pengbo Du, Li Zhang, Xuefeng Zheng, Zhaotan Cui, Hanbin Qu, Shujun Cai

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Abstract

A 47–52-GHz power amplifier (PA) Microwave Monolithic Integrated Circuit (MMIC) with silicon carbon (SiC)-based gallium nitride (GaN) was reported in this work. The circuit solution gives particular consideration to the loss of matching the output matching network. In pulse conditions, the PA can reach a maximum saturated output power of 43 dBm (20 W) with typical gain values of 18 dB and power-added efficiency of 21%. The output power at −1 dB gain compression ( $P_{1 d B}$ ) is 40.2 dBm, and the power density is up to 3.36 W/mm in the active periphery under the drain voltage of 24 V. The chip is compact with an area of 5.6 × 3.7 mm². This PA achieves higher output power in comparison to the reported PA MMIC.

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输出功率为 20 W 的 47-52 GHz 紧凑型功率放大器 MMIC

这项研究报告了一种使用碳化硅（SiC）基氮化镓（GaN）的 47-52 GHz 功率放大器（PA）微波单片集成电路（MMIC）。电路解决方案特别考虑了输出匹配网络的匹配损耗。在脉冲条件下，功率放大器的最大饱和输出功率可达 43 dBm（20 W），典型增益值为 18 dB，功率附加效率为 21%。-1 dB 增益压缩（P 1 d B ${P}_{1dB}$ ）时的输出功率为 40.2 dBm，在 24 V 漏极电压下，有源外围的功率密度高达 3.36 W/mm。芯片结构紧凑，面积为 5.6 × 3.7 mm2。与已报道的功率放大器 MMIC 相比，该功率放大器实现了更高的输出功率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microwave and Optical Technology Letters 工程技术-工程：电子与电气

CiteScore

3.40

自引率

20.00%

发文量

371

审稿时长

4.3 months

期刊介绍： Microwave and Optical Technology Letters provides quick publication (3 to 6 month turnaround) of the most recent findings and achievements in high frequency technology, from RF to optical spectrum. The journal publishes original short papers and letters on theoretical, applied, and system results in the following areas. - RF, Microwave, and Millimeter Waves - Antennas and Propagation - Submillimeter-Wave and Infrared Technology - Optical Engineering All papers are subject to peer review before publication