Dispersion compensation design of high-density stacking RFSS absorbers for wideband applications

IF 3.1 3区物理与天体物理 Q2 PHYSICS, APPLIED

Journal of Physics D: Applied Physics Pub Date : 2024-09-16 DOI:10.1088/1361-6463/ad7511

Zhinan Luo, Xiaoxiao Ding, Jie Yang, Yuhan Wu, Bichao Wang, Ling Miao, Shaowei Bie and Jianjun Jiang

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引用次数: 0

Abstract

A dispersion compensation design absorber realized by high-density stacking resistive frequency selective surface (RFSS) is proposed for wideband applications. Firstly, the quantitative relationship between the equivalent impedance of RFSS and the permittivity of the effective media is constructed with the help of the transmission matrix method. The dispersion regulation of permittivity is achieved by changing the pattern and the square resistance of RFSS. In terms of absorber design, a uniform absorber with dispersion manipulation is developed as a precursor absorber. The uniform absorber has an absorption performance better than −8.5 dB above 2 GHz at normal incidence. The loss mechanism is analyzed in detail by electric field distribution and surface power loss density distribution, indicating that the uniform design cannot achieve thickness saving when extending to low frequency. Therefore, a dispersion compensation design absorber is proposed to extend −10 dB bandwidth to 1.64–28.8 GHz. Experiment results agree well with the simulation results, validating the analytic methods and design principles.

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用于宽带应用的高密度堆叠 RFSS 吸收器的色散补偿设计

针对宽带应用，提出了一种由高密度堆叠电阻频率选择表面（RFSS）实现的色散补偿设计吸收器。首先，利用传输矩阵法构建了 RFSS 等效阻抗与有效介质介电常数之间的定量关系。通过改变 RFSS 的图案和方阻，实现对介电常数的色散调节。在吸收器设计方面，开发了一种具有色散调节功能的均匀吸收器作为前驱吸收器。该均匀吸收器在正常入射角下 2 GHz 以上的吸收性能优于-8.5 dB。通过电场分布和表面功率损耗密度分布对损耗机理进行了详细分析，结果表明，当扩展到低频时，均匀设计无法实现厚度节省。因此，我们提出了一种色散补偿设计吸收器，将 -10 dB 带宽扩展到 1.64-28.8 GHz。实验结果与仿真结果十分吻合，验证了分析方法和设计原理。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Physics D: Applied Physics 物理-物理：应用

CiteScore

6.80

自引率

8.80%

发文量

835

审稿时长

2.1 months

期刊介绍： This journal is concerned with all aspects of applied physics research, from biophysics, magnetism, plasmas and semiconductors to the structure and properties of matter.