Study on the adsorption and photodegradation of ciprofloxacin using mesoporous Nd2O3/maleic hydrazide doped gC3N4 nanocomposite

IF 4.3 3区 材料科学 Q2 MATERIALS SCIENCE, COATINGS & FILMS
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Abstract

A sonication method was used to synthesize Nd2O3 bedecked maleic hydrazide-doped gC3N4 (Nd2O3/MH-gC3N4) nanocomposite. The physicochemical properties of the nanocomposites were studied utilizing various analytical instruments, such as XRD, FTIR, HRSEM, HRTEM, EDAX, UV-DRS, XPS, BET, EIS, and Mott-Schottky analysis. Nd2O3/MH-gC3N4 nanocomposite enhanced the photocatalytic degradation of Ciprofloxacin (CIP) in aqueous solution through efficient adsorption. The degradation efficiency was improvised by optimizing various conditions which included the initial concentration of CIP solution, catalyst dosage, different photocatalysts, pH, anions, and scavenger studies. The Nd2O3/MH-gC3N4 nanocomposite degraded the organic pollutant to the level of 97.18 % within 120 min, with a rate constant of 0.02974 min−1. Scavenger analysis revealed the active involvement of reactive species during the photodegradation process. The photostability of the material was confirmed by a recyclability test. This study proposed a Z-scheme photocatalytic degradation mechanism and LC-MS analysis was used to identify the intermediate products. Furthermore, because of the high surface area (808.738 m2/g) and robust electrostatic interactions between the catalysts and CIP molecules, Nd2O3/MH-gC3N4 nanocomposite demonstrated higher adsorption and photocatalytic ability for the removal of CIP from aqueous solution. A real lake water sample analysis was also performed using a Ciplox-500 drug which confirmed the practical application of the synthesized photocatalyst.

Abstract Image

介孔 Nd2O3/掺杂马来酰肼的 gC3N4 纳米复合材料对环丙沙星的吸附和光降解研究
采用超声法合成了掺杂马来酰肼的 Nd2O3 床层 gC3N4(Nd2O3/MH-gC3N4)纳米复合材料。利用各种分析仪器,如 XRD、FTIR、HRSEM、HRTEM、EDAX、UV-DRS、XPS、BET、EIS 和 Mott-Schottky 分析,研究了纳米复合材料的物理化学性质。Nd2O3/MH-gC3N4 纳米复合材料通过高效吸附增强了水溶液中环丙沙星(CIP)的光催化降解能力。通过优化各种条件(包括 CIP 溶液的初始浓度、催化剂用量、不同的光催化剂、pH 值、阴离子和清除剂研究),提高了降解效率。Nd2O3/MH-gC3N4 纳米复合材料在 120 分钟内降解了 97.18% 的有机污染物,降解速率常数为 0.02974 min-1。清除剂分析表明,光降解过程中活性物种积极参与。材料的光稳定性通过可回收性测试得到了证实。本研究提出了一种 Z 型光催化降解机制,并利用 LC-MS 分析鉴定了中间产物。此外,由于 Nd2O3/MH-gC3N4 纳米复合材料具有较高的比表面积(808.738 m2/g),且催化剂与 CIP 分子之间具有较强的静电相互作用,因此在去除水溶液中的 CIP 方面表现出较高的吸附和光催化能力。此外,还使用 Ciplox-500 药物对真实的湖水样本进行了分析,证实了合成光催化剂的实际应用。
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来源期刊
Diamond and Related Materials
Diamond and Related Materials 工程技术-材料科学:综合
CiteScore
6.00
自引率
14.60%
发文量
702
审稿时长
2.1 months
期刊介绍: DRM is a leading international journal that publishes new fundamental and applied research on all forms of diamond, the integration of diamond with other advanced materials and development of technologies exploiting diamond. The synthesis, characterization and processing of single crystal diamond, polycrystalline films, nanodiamond powders and heterostructures with other advanced materials are encouraged topics for technical and review articles. In addition to diamond, the journal publishes manuscripts on the synthesis, characterization and application of other related materials including diamond-like carbons, carbon nanotubes, graphene, and boron and carbon nitrides. Articles are sought on the chemical functionalization of diamond and related materials as well as their use in electrochemistry, energy storage and conversion, chemical and biological sensing, imaging, thermal management, photonic and quantum applications, electron emission and electronic devices. The International Conference on Diamond and Carbon Materials has evolved into the largest and most well attended forum in the field of diamond, providing a forum to showcase the latest results in the science and technology of diamond and other carbon materials such as carbon nanotubes, graphene, and diamond-like carbon. Run annually in association with Diamond and Related Materials the conference provides junior and established researchers the opportunity to exchange the latest results ranging from fundamental physical and chemical concepts to applied research focusing on the next generation carbon-based devices.
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