Metal-enhanced carbon-nitrogen material for selective detection of hazardous gases: Insights from interface electronic states

IF 5.7 2区 材料科学 Q2 CHEMISTRY, PHYSICAL
{"title":"Metal-enhanced carbon-nitrogen material for selective detection of hazardous gases: Insights from interface electronic states","authors":"","doi":"10.1016/j.surfin.2024.105097","DOIUrl":null,"url":null,"abstract":"<div><p>In this study, utilizing density functional theory, the C<sub>3</sub>N<sub>1</sub> monolayer modified by Ir, Pd, Pt, and Rh atoms (Ir/Pd/Pt/Rh-C<sub>2</sub>N<sub>1</sub>) was chosen for selective adsorption of C<sub>2</sub>H<sub>2</sub> amidst multiple gases (H<sub>2</sub>O, C<sub>2</sub>H<sub>2</sub>, and C<sub>4</sub>H<sub>10</sub>O<sub>2</sub>). According to the results of cohesive energy and <em>ab initio</em> molecular dynamics simulations, it is indicated that precious metal atoms can be stably anchored on the monolayer while enhancing the conductivity of the material The analysis of the electrostatic potential and work function determined the highly active sites and electron release capacity. In addition, the adsorption energy and distance disclosed the gas-solid interface structure of multiple gases on the Ir/Pd/Pt/Rh-C<sub>2</sub>N<sub>1</sub> monolayer. Importantly, C<sub>2</sub>H<sub>2</sub> exhibits strong responses to p-type semiconductor Pt-C<sub>2</sub>N<sub>1</sub> and n-type semiconductor Ir-C<sub>2</sub>N<sub>1</sub>, respectively. Crystal Orbital Hamilton Population reveals the difference in adsorption energy due to modifications involving four precious metals. Interestingly, for the first time, the density of states calculation reveals that under the coexistence of multiple gases, the Pt/Ir-C<sub>2</sub>N<sub>1</sub> monolayer effectively eliminates the interference of other gases and has a unique response only to C<sub>2</sub>H<sub>2</sub>. In real situations, with the basis of Gibbs free energy and Einstein's law of diffusion, it was determined that Pt-C<sub>2</sub>N<sub>1</sub> and Ir-C<sub>2</sub>N<sub>1</sub> showed excellent hydrophobicity, a wider temperature range, and a low diffusion activation energy barrier. In summary, Pt-C<sub>2</sub>N<sub>1</sub> and Ir-C<sub>2</sub>N<sub>1</sub> detect C<sub>2</sub>H<sub>2</sub> without interference, maintaining fundamental principles, responsiveness, stability, and versatility unaffected by external factors.</p></div>","PeriodicalId":22081,"journal":{"name":"Surfaces and Interfaces","volume":null,"pages":null},"PeriodicalIF":5.7000,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Surfaces and Interfaces","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2468023024012537","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0

Abstract

In this study, utilizing density functional theory, the C3N1 monolayer modified by Ir, Pd, Pt, and Rh atoms (Ir/Pd/Pt/Rh-C2N1) was chosen for selective adsorption of C2H2 amidst multiple gases (H2O, C2H2, and C4H10O2). According to the results of cohesive energy and ab initio molecular dynamics simulations, it is indicated that precious metal atoms can be stably anchored on the monolayer while enhancing the conductivity of the material The analysis of the electrostatic potential and work function determined the highly active sites and electron release capacity. In addition, the adsorption energy and distance disclosed the gas-solid interface structure of multiple gases on the Ir/Pd/Pt/Rh-C2N1 monolayer. Importantly, C2H2 exhibits strong responses to p-type semiconductor Pt-C2N1 and n-type semiconductor Ir-C2N1, respectively. Crystal Orbital Hamilton Population reveals the difference in adsorption energy due to modifications involving four precious metals. Interestingly, for the first time, the density of states calculation reveals that under the coexistence of multiple gases, the Pt/Ir-C2N1 monolayer effectively eliminates the interference of other gases and has a unique response only to C2H2. In real situations, with the basis of Gibbs free energy and Einstein's law of diffusion, it was determined that Pt-C2N1 and Ir-C2N1 showed excellent hydrophobicity, a wider temperature range, and a low diffusion activation energy barrier. In summary, Pt-C2N1 and Ir-C2N1 detect C2H2 without interference, maintaining fundamental principles, responsiveness, stability, and versatility unaffected by external factors.

Abstract Image

用于选择性检测有害气体的金属增强碳氮材料:界面电子状态的启示
本研究利用密度泛函理论,选择了由 Ir、Pd、Pt 和 Rh 原子修饰的 C3N1 单层(Ir/Pd/Pt/Rh-C2N1)来选择性地吸附多种气体(H2O、C2H2 和 C4H10O2)中的 C2H2。根据内聚能和 ab initio 分子动力学模拟的结果,贵金属原子可以稳定地锚定在单层上,同时提高了材料的导电性。此外,吸附能和吸附距离揭示了 Ir/Pd/Pt/Rh-C2N1 单层上多种气体的气固界面结构。重要的是,C2H2 对 p 型半导体 Pt-C2N1 和 n 型半导体 Ir-C2N1 分别表现出强烈的反应。晶体轨道汉密尔顿波普揭示了涉及四种贵金属的改性导致的吸附能量差异。有趣的是,状态密度计算首次揭示了在多种气体共存的情况下,Pt/Ir-C2N1 单层能有效消除其他气体的干扰,只对 C2H2 有独特的响应。在实际情况下,以吉布斯自由能和爱因斯坦扩散定律为基础,确定了 Pt-C2N1 和 Ir-C2N1 表现出优异的疏水性、较宽的温度范围和较低的扩散活化能势垒。总之,Pt-C2N1 和 Ir-C2N1 可以不受干扰地检测 C2H2,保持基本原理、响应性、稳定性和多功能性,不受外部因素的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Surfaces and Interfaces
Surfaces and Interfaces Chemistry-General Chemistry
CiteScore
8.50
自引率
6.50%
发文量
753
审稿时长
35 days
期刊介绍: The aim of the journal is to provide a respectful outlet for ''sound science'' papers in all research areas on surfaces and interfaces. We define sound science papers as papers that describe new and well-executed research, but that do not necessarily provide brand new insights or are merely a description of research results. Surfaces and Interfaces publishes research papers in all fields of surface science which may not always find the right home on first submission to our Elsevier sister journals (Applied Surface, Surface and Coatings Technology, Thin Solid Films)
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信