Exploring the dual functionality of copper oxide for enhanced supercapacitor performance and photocatalysis application

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Swapnil N. Pawar, Shankar G. Randive, Prathamesh B. Dahivade, Yugen A. Kullkarni, Prashant P. Chikode, Balkrishna J. Lokhande
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Abstract

In this study, CuO thin films were deposited onto stainless steel substrates using the SILAR (Successive Ionic Layer Adsorption and Reaction) technique. The samples underwent annealing at various temperatures: room temperature (300 K, 500 K, 700 K, and 900 K). We investigated the impact of annealing temperature on the crystal structure, electrochemical properties, and morphology of the CuO thin film electrodes. These aspects were correlated with electrochemical analyses, namely cyclic voltammetry and chronopotentiometry, as well as physical characterizations including contact angle measurements, X-ray diffraction and field emission scanning electron microscopy. Additionally, atomic force microscopy provided 3D images along with parameters such as average roughness, root mean square roughness, and average grain diameter. The CuO thin film electrodes exhibited a notable enhancement in capacitive behaviour. Specifically, the specific capacitance reached a significant value of 946 F/g at 5 mV/sec. Moreover, the highest observed specific power was recorded at 42 kW/kg during scans at 1 mV/sec. Notably, the CuO films also demonstrated commendable photo-catalytic activity in the degradation of methylene blue dye.

Abstract Image

探索氧化铜的双重功能以增强超级电容器性能和光催化应用
本研究采用 SILAR(连续离子层吸附和反应)技术在不锈钢基底上沉积了氧化铜薄膜。样品在不同温度下进行退火:室温(300 K、500 K、700 K 和 900 K)。我们研究了退火温度对氧化铜薄膜电极的晶体结构、电化学特性和形态的影响。这些方面与电化学分析(即循环伏安法和计时电位计)以及物理特性(包括接触角测量、X 射线衍射和场发射扫描电子显微镜)相关联。此外,原子力显微镜还提供了三维图像以及平均粗糙度、均方根粗糙度和平均晶粒直径等参数。氧化铜薄膜电极的电容特性显著增强。具体来说,在 5 mV/sec 时,比电容达到了 946 F/g 的显著值。此外,在 1 毫伏/秒的扫描过程中,观测到的最高比功率为 42 千瓦/千克。值得注意的是,氧化铜薄膜在降解亚甲基蓝染料方面也表现出了值得称道的光催化活性。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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