Pressure-induced superconductivity in monoclinic RhBi$_2$

KeYuan Ma, Subhajit Roychowdhury, Jonathan Noky, Horst Borrmann, Walter Schnelle, Chandra Shekhar, Sergey A. Medvedev, Claudia Felser
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Abstract

RhBi$_2$ is a polymorphic system that exhibits two distinct phases. RhBi$_2$ in the triclinic phase has been identified as a weak topological insulator with a van Hove singularity point close to the Fermi energy. Thus, triclinic RhBi$_2$ is expected to exhibit exotic quantum properties under strain or pressure. In this study, we report on the emergence of superconductivity in the monoclinic RhBi$_2$ under external pressures. The electrical resistivity behavior of the monoclinic RhBi$_2$ single crystal is studied at a wide range of applied external pressures up to 40 GPa. We observe a pressure-induced superconductivity with a dome-shaped dependence of the critical temperature on pressure at pressures above 10 GPa. A maximum critical temperature ($T_\mathrm{c}$) value of $T_\mathrm{c}$ = 5.1 K is reached at the pressure of 16.1 GPa. Furthermore, we performed detailed ab initio calculations to understand the electronic band structures of monoclinic RhBi$_2$ under varying pressures. The combination of topology and pressure-induced superconductivity in the RhBi$_2$ polymorphic system may provide us with a new promising material platform to investigate topological superconductivity.
单斜 RhBi$_2$ 中的压力诱导超导性
RhBi$_2$ 是一种多晶体系统,表现出两种不同的阶段。三linic 相中的 RhBi$_2$ 已被确定为弱拓扑绝缘体,其范霍夫奇点接近费米能。因此,三linicRhBi$_2$有望在应变或压力作用下表现出奇异的量子特性。在这项研究中,我们报告了在外部压力作用下单斜RhBi$_2$中出现的超导现象。我们研究了单斜 RhBi$_2$ 单晶体在高达 40 GPa 的大范围外加压力下的电阻率行为。我们观察到压力诱导的超导现象,当压力超过 10 GPa 时,临界温度与压力呈穹顶状相关。在压力为 16.1 GPa 时,临界温度($T_\mathrm{c}$)达到最大值 $T_\mathrm{c}$ = 5.1 K。此外,我们还进行了详细的 ab initio 计算,以了解单斜 RhBi$_2$ 在不同压力下的电子能带结构。在 RhBi$_2$ 多晶体系统中,拓扑结构和压力诱导超导性的结合可能为我们研究拓扑超导性提供了一个新的有前途的材料平台。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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