{"title":"Flexible memristors with low-operation voltage and high bending stability based on Cu2AgBiI6 perovskite","authors":"Xinci Chen, Xiang Yin, Zicong Li, Lingyu Meng, Xiaoli Han, Zhijun Zhang, Xianmin Zhang","doi":"10.1063/5.0231148","DOIUrl":null,"url":null,"abstract":"Cu2AgBiI6 films were prepared by a one-step spin coating method, and flexible memristors with an Ag/PMMA/Cu2AgBiI6/ITO structure were constructed. The devices showed a bipolar resistive switching behavior with low switching voltage, which is beneficial for reducing energy consumption. Furthermore, this study found that the device exhibits an endurance of about 900 cycles, a higher ON/OFF ratio of over 103, a long retention time (∼104 s), and high stabilities against mechanical stress. Remarkably, the present flexible memristor displayed extraordinary flexibility and stability, with no significant change for the resistive switching behavior even at various bending angles or after undergoing 900 bending cycles. This study establishes that the lead-free halide perovskite Cu2AgBiI6 can be used for the resistive random-access memory of flexible electronics.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"14 1","pages":""},"PeriodicalIF":2.7000,"publicationDate":"2024-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0231148","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0
Abstract
Cu2AgBiI6 films were prepared by a one-step spin coating method, and flexible memristors with an Ag/PMMA/Cu2AgBiI6/ITO structure were constructed. The devices showed a bipolar resistive switching behavior with low switching voltage, which is beneficial for reducing energy consumption. Furthermore, this study found that the device exhibits an endurance of about 900 cycles, a higher ON/OFF ratio of over 103, a long retention time (∼104 s), and high stabilities against mechanical stress. Remarkably, the present flexible memristor displayed extraordinary flexibility and stability, with no significant change for the resistive switching behavior even at various bending angles or after undergoing 900 bending cycles. This study establishes that the lead-free halide perovskite Cu2AgBiI6 can be used for the resistive random-access memory of flexible electronics.
期刊介绍:
The Journal of Applied Physics (JAP) is an influential international journal publishing significant new experimental and theoretical results of applied physics research.
Topics covered in JAP are diverse and reflect the most current applied physics research, including:
Dielectrics, ferroelectrics, and multiferroics-
Electrical discharges, plasmas, and plasma-surface interactions-
Emerging, interdisciplinary, and other fields of applied physics-
Magnetism, spintronics, and superconductivity-
Organic-Inorganic systems, including organic electronics-
Photonics, plasmonics, photovoltaics, lasers, optical materials, and phenomena-
Physics of devices and sensors-
Physics of materials, including electrical, thermal, mechanical and other properties-
Physics of matter under extreme conditions-
Physics of nanoscale and low-dimensional systems, including atomic and quantum phenomena-
Physics of semiconductors-
Soft matter, fluids, and biophysics-
Thin films, interfaces, and surfaces