Enhanced electrical properties of pulsed Sn-doped (-201) β-Ga2O3 thin films via MOCVD homoepitaxy

IF 5.7 2区材料科学 Q2 CHEMISTRY, PHYSICAL

Surfaces and Interfaces Pub Date : 2024-09-03 DOI:10.1016/j.surfin.2024.105056

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Abstract

Pulsed Sn doping (PSD) homoepitaxial gallium oxide (Ga₂O₃) films were deposited on (-201) β-Ga₂O₃ substrates using metal-organic chemical vapor deposition (MOCVD). The study aims to optimize Sn doping conditions to enhance the electrical properties of β-Ga₂O₃ films. The influence of Sn pulse width (ranging from 0.1 min to 0.3 min) on the morphology, structure, and electrical properties of the film was investigated. The Full Width at Half Maximum (FWHM) of the (-201) crystal plane rocking curve for all doped films is <50 arcsec, indicating high crystal quality. At a Sn pulse width of 0.2 min, we achieve the optimal balance between doping efficiency and crystal quality, resulting in a resistivity of 0.0487 Ω·cm, an electron mobility of 63.5 cm²/V·s, and a carrier concentration of 1.82 × 10¹⁸ cm^-3. Compared to continuous Sn doping, PSD results in approximately 157 % increase in carrier concentration and 99 % increase in electron mobility. The application of PSD allows sufficient diffusion time for Sn atoms to effectively incorporate into the film, signifying a crucial advancement in enhancing the film's electrical properties and reducing the cost of the metal organic doping source.

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通过 MOCVD 同源外延技术提高脉冲掺杂 Sn (-201) β-Ga2O3 薄膜的电气性能

利用金属有机化学气相沉积（MOCVD）技术在 (-201) β-Ga2O3 基底上沉积了脉冲锡掺杂（PSD）同位氧化镓（Ga2O3）薄膜。该研究旨在优化 Sn 掺杂条件，以提高 β-Ga2O3 薄膜的电学特性。研究考察了锡脉冲宽度（从 0.1 分钟到 0.3 分钟不等）对薄膜形貌、结构和电性能的影响。所有掺杂薄膜的(-201)晶面摇摆曲线的半最大全宽（FWHM）均为 50 弧秒，表明晶体质量很高。在 Sn 脉冲宽度为 0.2 分钟时，我们实现了掺杂效率和晶体质量之间的最佳平衡，使电阻率达到 0.0487 Ω-cm，电子迁移率达到 63.5 cm2/V-s，载流子浓度达到 1.82 × 1018 cm-3。与连续掺入锡相比，PSD 使载流子浓度提高了约 157%，电子迁移率提高了 99%。PSD 的应用为锡原子有效融入薄膜提供了充足的扩散时间，这标志着在增强薄膜电学特性和降低金属有机掺杂源成本方面取得了重大进展。

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来源期刊

Surfaces and Interfaces Chemistry-General Chemistry

CiteScore

8.50

自引率

6.50%

发文量

753

审稿时长

35 days

期刊介绍： The aim of the journal is to provide a respectful outlet for ''sound science'' papers in all research areas on surfaces and interfaces. We define sound science papers as papers that describe new and well-executed research, but that do not necessarily provide brand new insights or are merely a description of research results. Surfaces and Interfaces publishes research papers in all fields of surface science which may not always find the right home on first submission to our Elsevier sister journals (Applied Surface, Surface and Coatings Technology, Thin Solid Films)