Atif Alkhazali , Mohammad M. Hamasha , Haitham Khaled , Mohammad Shbool , Mazin Obaidat
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引用次数: 0
Abstract
This work analyzes the mechanical and electrical properties of molybdenum (Mo) thin films at 100 and 200 nm thicknesses under different strain and strain rate circumstances. The study examines Mo film deposition by RF magnetron sputtering on PET substrates and their mechanical stress behavior. The investigation reveals distinct patterns of crack initiation and propagation, where primary cracks predominantly appear perpendicular to the direction of applied strain, and secondary cracks develop due to stress redistribution, displaying a complex interplay between film thickness, strain rate, and crack morphology. A key finding of this study is the observation of more advanced and irregular crack patterns in thicker films (200 nm) subjected to higher strain rates (1000 mm/min), suggesting a heightened sensitivity to mechanical stress and a more chaotic fracture process compared to thinner films or those under lower strain rates. Additionally, instances of film edge delamination, particularly under high strain conditions, highlight the challenges in maintaining film-substrate adhesion and integrity under extreme mechanical deformation. The research provides critical insights into the mechanical robustness and electrical performance of Mo thin films, emphasizing the influence of microstructural properties, deposition parameters, and external stressors on their applicability in high-tech industries. The findings underscore the importance of optimizing deposition techniques and understanding material behavior under stress to enhance the durability and reliability of Mo thin films in practical applications, ranging from semiconductor devices to photovoltaic systems.
期刊介绍:
Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged.
Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.