A 30-nm-tunable photoluminescence caused by remote Γ-X-mixings in a GaAs/AlAs asymmetric seven-folded quantum-well superlattice separating with very thin barriers

IF 2.9 3区物理与天体物理 Q3 NANOSCIENCE & NANOTECHNOLOGY

Physica E-low-dimensional Systems & Nanostructures Pub Date : 2024-08-12 DOI:10.1016/j.physe.2024.116063

Rui Wang , Makoto Hosoda , Keisuke Hata , Kousuke Yoshida , Ryuto Murohara , Kouichi Akahane , Naoki Ohtani

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Abstract

We investigated the photoluminescence (PL) properties of a GaAs/AlAs asymmetric seven-folded quantum well (ASFQW) superlattices (SLs) with thin separating barriers within the ASFQW period. The linearly blue-shifted PL was proportional to the applied bias voltage. By performing a numerical analysis of the electric-field dependence of subband energies in the ASFQW, we concluded that this PL originated from consecutive Γ-X mixings between spatially long-range-separated Γ-subband states and an X-state in this ASFQW. These results indicate that various phenomena appear in ASFQW-SLs due to the increased degree of freedom of carrier transport paths, but a precise analysis of the electric field dependence of subband resonances is required. Therefore, the integrated study of AMQW-SLs definitely reveals new physical properties and leads to the development of new devices.

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在具有极薄势垒的 GaAs/AlAs 非对称七折叠量子阱超晶格中，由远程 Γ-X 混合引起的 30 纳米可调光致发光

我们研究了砷化镓/砷化镓不对称七折边量子阱（ASFQW）超晶格（SLs）的光致发光（PL）特性。线性蓝移 PL 与施加的偏置电压成正比。通过对 ASFQW 中子带能量的电场依赖性进行数值分析，我们得出结论：这种 PL 源自空间长程分离的 Γ 子带态与 ASFQW 中的 X 态之间的连续 Γ-X 混合。这些结果表明，由于载流子传输路径的自由度增加，ASFQW-SL 中出现了各种现象，但还需要对子带共振的电场依赖性进行精确分析。因此，对 AMQW-SLs 的综合研究肯定会揭示出新的物理性质，并促进新器件的开发。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Physica E-low-dimensional Systems & Nanostructures 物理-纳米科技

CiteScore

7.30

自引率

6.10%

发文量

356

审稿时长

65 days

期刊介绍： Physica E: Low-dimensional systems and nanostructures contains papers and invited review articles on the fundamental and applied aspects of physics in low-dimensional electron systems, in semiconductor heterostructures, oxide interfaces, quantum wells and superlattices, quantum wires and dots, novel quantum states of matter such as topological insulators, and Weyl semimetals. Both theoretical and experimental contributions are invited. Topics suitable for publication in this journal include spin related phenomena, optical and transport properties, many-body effects, integer and fractional quantum Hall effects, quantum spin Hall effect, single electron effects and devices, Majorana fermions, and other novel phenomena. Keywords: • topological insulators/superconductors, majorana fermions, Wyel semimetals; • quantum and neuromorphic computing/quantum information physics and devices based on low dimensional systems; • layered superconductivity, low dimensional systems with superconducting proximity effect; • 2D materials such as transition metal dichalcogenides; • oxide heterostructures including ZnO, SrTiO3 etc; • carbon nanostructures (graphene, carbon nanotubes, diamond NV center, etc.) • quantum wells and superlattices; • quantum Hall effect, quantum spin Hall effect, quantum anomalous Hall effect; • optical- and phonons-related phenomena; • magnetic-semiconductor structures; • charge/spin-, magnon-, skyrmion-, Cooper pair- and majorana fermion- transport and tunneling; • ultra-fast nonlinear optical phenomena; • novel devices and applications (such as high performance sensor, solar cell, etc); • novel growth and fabrication techniques for nanostructures