Thermally Grown MoSe2 Thin Film Based MSM Broadband Photodetector

IF 2.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Photonics Technology Letters Pub Date : 2024-08-13 DOI:10.1109/LPT.2024.3442969

Shikha Singh;Satyabrata Jit

引用次数: 0

Abstract

An Ag/MoSe2 thin film/Ag structure based metal-semiconductor-metal (MSM) broadband photodetector fabricated on SiO2 coated Si substrate is reported in this letter. The nano-powder synthesized by the hydrothermal route was used for fabricating MoSe2 thin film by thermal evaporation technique. The interdigitated Ag Schottky contacts were fabricated on the MoSe2 film by thermal evaporation method to obtain the desired structure. Photoresponse of the proposed MSM device was measured using monochromatic light of 300 nm–1100 nm. The response showed the maximum responsivity, detectivity and external quantum efficiency (EQE) of ~50 mA/W,

$\sim 4.5\times 10^{11}$

Jones and

$\sim ~16$

% respectively at 415 nm (incident power density of

$\sim 70~\mu $

W/cm2) under the applied bias voltage of 1.5 V. The fabricated device also shows fast time response with rise (fall) time as 17.8 ms (18.3 ms).

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基于热生长 MoSe2 薄膜的 MSM 宽带光电探测器

本信报告了一种基于Ag/MoSe2薄膜/Ag结构的金属-半导体-金属（MSM）宽带光电探测器，该探测器是在涂有二氧化硅的硅衬底上制造的。通过水热法合成的纳米粉体被用于热蒸发技术制造 MoSe2 薄膜。通过热蒸发方法在 MoSe2 薄膜上制作了相互咬合的 Ag Schottky 触点，从而获得了所需的结构。利用波长为 300 纳米至 1100 纳米的单色光测量了拟议 MSM 器件的光响应。结果表明，在 1.5 V 的外加偏置电压下，415 nm 处（入射功率密度为 70~\mu $ W/cm2）的最大响应度、检测度和外部量子效率（EQE）分别为 ~50 mA/W、4.5\times 10^{11}$ Jones 和 $\sim ~16 $%。所制造的器件还显示出快速的时间响应，上升（下降）时间为 17.8 毫秒（18.3 毫秒）。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Photonics Technology Letters 工程技术-工程：电子与电气

CiteScore

5.00

自引率

3.80%

发文量

404

审稿时长

2.0 months

期刊介绍： IEEE Photonics Technology Letters addresses all aspects of the IEEE Photonics Society Constitutional Field of Interest with emphasis on photonic/lightwave components and applications, laser physics and systems and laser/electro-optics technology. Examples of subject areas for the above areas of concentration are integrated optic and optoelectronic devices, high-power laser arrays (e.g. diode, CO2), free electron lasers, solid, state lasers, laser materials'' interactions and femtosecond laser techniques. The letters journal publishes engineering, applied physics and physics oriented papers. Emphasis is on rapid publication of timely manuscripts. A goal is to provide a focal point of quality engineering-oriented papers in the electro-optics field not found in other rapid-publication journals.