A Wideband CMOS Active Phase Shifter Using a Transformer-Based RL Polyphase Filter

0 ENGINEERING, ELECTRICAL & ELECTRONIC
Taotao Xu;Ke Long;Haoshen Zhu;Cao Wan;Shuai Deng;Pei Qin;Wenquan Che;Quan Xue
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引用次数: 0

Abstract

A millimeter-wave CMOS active vector-sum phase shifter (VSPS) with a phase resolution of 5.625° using a two-stage transformer-based resistor and inductor (RL) polyphase filter (PPF) for generating wideband in-phase/quadrature (I/Q) signals is proposed. Theoretical analysis demonstrates that the inductors in RL PPF can resonate with the capacitive loads to boost the passive voltage gain and alleviate the issue of high loss in the traditional RC PPF. Furthermore, the RL PPF provides a larger bandwidth and a better tolerance to process variations. An active VSPS prototype incorporating the proposed RL PPF is implemented in 65-nm CMOS process. The measured results of the phase shifter show a maximum insertion gain of −2.28 dB with a maximum power consumption of 20.52 mW. The measured root-mean-square (rms) phase error and gain error over the 360° phase shifting range are 0.71°–2.95° and 0.67–0.76 dB, respectively, from 20 to 30 GHz (FBW =40%). The core size is 0.238 mm2.
使用基于变压器的 RL 多相滤波器的宽带 CMOS 有源移相器
本文提出了一种毫米波 CMOS 有源矢量和相移器(VSPS),其相位分辨率为 5.625°,使用基于变压器的两级电阻和电感(RL)多相滤波器(PPF)来生成宽带同相/正交(I/Q)信号。理论分析表明,RL PPF 中的电感器可与电容负载产生共振,从而提高无源电压增益,并缓解传统 RC PPF 的高损耗问题。此外,RL PPF 的带宽更大,对工艺变化的耐受性更好。采用 65 纳米 CMOS 工艺实现了一个包含拟议 RL PPF 的有源 VSPS 原型。移相器的测量结果显示,最大插入增益为 -2.28 dB,最大功耗为 20.52 mW。在 20 至 30 GHz(FBW =40%)的 360° 相移范围内,测得的均方根(rms)相位误差和增益误差分别为 0.71°-2.95° 和 0.67-0.76 dB。磁芯尺寸为 0.238 平方毫米。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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