A 9-V Wireless Power Receiver IC With 74.2% Power Conversion Efficiency and Integrated Bidirectional Telemetries for Implantable Neurostimulation Systems in Standard CMOS

Abstract

This letter presents a 9-V wireless power and data receiver IC in a standard CMOS process technology. A transistor-stacking scheme is employed for accommodating active circuits in a high-voltage domain that exceeds the transistor’s voltage tolerance. The IC successfully generates 9-V through a 21-stage cross-coupled rectifier and regulated 6- and 3-V supplies with low-dropout regulators (LDOs) delivering a maximum power of 27 mW with a peak power conversion efficiency (PCE) of 74.2%. Forward telemetry at 200 kbit/s and backward telemetry at 10 kbit/s are achieved based on on-off keying (OOK) and load-shift keying (LSK) modulation schemes, respectively, which negligibly affect the generated voltage domains. The IC serves as a wireless power solution for batteryless and high-voltage-required medical implants.