Antimony composition impact on band alignment in InAs/GaAsSb quantum dots

IF 2.1 4区物理与天体物理 Q3 PHYSICS, CONDENSED MATTER

Solid State Communications Pub Date : 2024-08-02 DOI:10.1016/j.ssc.2024.115648

I. Saïdi , K. Boujdaria , C. Testelin

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Abstract

We present a theoretical study of the electronic and excitonic states in InAs/GaAsSb quantum dots. We first center our study on the dependence of the antimony composition in the positioning of conduction- and valence-band alignments in InAs/GaAsSb/GaAs heterostructures. We predict a transition from type I to type II quantum dots at critical composition $x_{c} = 0.128$ , which describes well the experimental trend. We discuss the influence of the quantum dot size and antimony composition on the spatial distributions of carriers and the exciton binding energy. We find that the ground state exciton binding energy is always significantly smaller $(≃ 4 m e V)$ for type II than for corresponding type I quantum dots $(≃ 14 m e V)$ . Finally, we also predict the excitonic radiative lifetime and find 1 $n s$ for type I and 10 $n s$ for type II quantum dots, in agreement with the existing experimental literature.

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锑成分对 InAs/GaAsSb 量子点带排列的影响

我们对 InAs/GaAsSb 量子点中的电子态和激子态进行了理论研究。我们首先集中研究了锑成分对 InAs/GaAsSb/GaAs 异质结构中导带和价带排列定位的影响。我们预测在临界成分 xc=0.128 时，量子点会从 I 型过渡到 II 型，这很好地描述了实验趋势。我们讨论了量子点尺寸和锑成分对载流子空间分布和激子结合能的影响。我们发现，II 型量子点的基态激子结合能≃4meV 总是明显小于相应的 I 型量子点 ≃14meV。最后，我们还预测了激子辐射寿命，发现 I 型量子点为 1 ns，II 型量子点为 10 ns，与现有的实验文献一致。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid State Communications 物理-物理：凝聚态物理

CiteScore

3.40

自引率

4.80%

发文量

287

审稿时长

51 days

期刊介绍： Solid State Communications is an international medium for the publication of short communications and original research articles on significant developments in condensed matter science, giving scientists immediate access to important, recently completed work. The journal publishes original experimental and theoretical research on the physical and chemical properties of solids and other condensed systems and also on their preparation. The submission of manuscripts reporting research on the basic physics of materials science and devices, as well as of state-of-the-art microstructures and nanostructures, is encouraged. A coherent quantitative treatment emphasizing new physics is expected rather than a simple accumulation of experimental data. Consistent with these aims, the short communications should be kept concise and short, usually not longer than six printed pages. The number of figures and tables should also be kept to a minimum. Solid State Communications now also welcomes original research articles without length restrictions. The Fast-Track section of Solid State Communications is the venue for very rapid publication of short communications on significant developments in condensed matter science. The goal is to offer the broad condensed matter community quick and immediate access to publish recently completed papers in research areas that are rapidly evolving and in which there are developments with great potential impact.