Effect of inelastic ion collisions on low-gain avalanche detectors explained by an ASi-Sii-defect mode

IF 1.4 3区物理与天体物理 Q3 INSTRUMENTS & INSTRUMENTATION

Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms Pub Date : 2024-07-29 DOI:10.1016/j.nimb.2024.165472

Kevin Lauer , Stephanie Reiß , Aaron Flötotto , Katharina Peh , Dominik Bratek , Robin Müller , Dirk Schulze , Wichard Beenken , Erik Hiller , Thomas Ortlepp , Stefan Krischok

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Abstract

The acceptor removal phenomenon (ARP), which hampers the functionality of low-gain avalanche detectors (LGAD), is discussed in frame of the A_Si-Si_i-defect model. The assumption of fast diffusion of interstitial silicon is shown to be superfluous for the explanation of the B_Si-Si_i-defect formation under irradiation, particular at very low temperatures. The experimentally observed properties of the ARP are explained by the donor properties of the B_Si-Si_i-defect in its ground state. Additionally, low temperature photoluminescence spectra are reported for quenched boron doped silicon showing so far unidentified PL lines, which change due to well-known light-induced degradation (LID) treatments.

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用 ASi-Sii- 缺陷模式解释非弹性离子碰撞对低增益雪崩探测器的影响

在 ASi-Sii- 缺陷模型的框架内讨论了阻碍低增益雪崩探测器（LGAD）功能的受体去除现象（ARP）。事实证明，间隙硅快速扩散的假设对于解释辐照下 BSi-Sii- 缺陷的形成是多余的，尤其是在非常低的温度下。实验观察到的 ARP 特性可以用 BSi-Sii- 缺陷在基态时的供体特性来解释。此外，还报告了掺硼硅的低温光致发光光谱，显示了迄今为止尚未发现的光致发光线，这些光致发光线由于众所周知的光诱导降解（LID）处理而发生变化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms 物理-核科学技术

CiteScore

2.80

自引率

7.70%

发文量

231

审稿时长

1.9 months

期刊介绍： Section B of Nuclear Instruments and Methods in Physics Research covers all aspects of the interaction of energetic beams with atoms, molecules and aggregate forms of matter. This includes ion beam analysis and ion beam modification of materials as well as basic data of importance for these studies. Topics of general interest include: atomic collisions in solids, particle channelling, all aspects of collision cascades, the modification of materials by energetic beams, ion implantation, irradiation - induced changes in materials, the physics and chemistry of beam interactions and the analysis of materials by all forms of energetic radiation. Modification by ion, laser and electron beams for the study of electronic materials, metals, ceramics, insulators, polymers and other important and new materials systems are included. Related studies, such as the application of ion beam analysis to biological, archaeological and geological samples as well as applications to solve problems in planetary science are also welcome. Energetic beams of interest include atomic and molecular ions, neutrons, positrons and muons, plasmas directed at surfaces, electron and photon beams, including laser treated surfaces and studies of solids by photon radiation from rotating anodes, synchrotrons, etc. In addition, the interaction between various forms of radiation and radiation-induced deposition processes are relevant.