Impact of the Oxide Aperture Width on the Degradation of 845 Nm VCSELs for Silicon Photonics

IF 4.3 2区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-06-18 DOI:10.1109/JSTQE.2024.3415674

Michele Zenari;Matteo Buffolo;Fabiana Rampazzo;Carlo De Santi;Francesca Rossi;Laura Lazzarini;Jeroen Goyvaerts;Alexander Grabowski;Johan S. Gustavsson;Roel Baets;Anders Larsson;Günther Roelkens;Gaudenzio Meneghesso;Enrico Zanoni;Matteo Meneghini

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Abstract

For the first time, we analyzed the degradation as a function of the oxide aperture in 845 nm VCSELs designed for silicon photonics (SiPh) applications. First, we evaluated the optical degradation of the devices by collecting EL images during a constant current stress. The experimental results showed an increased spreading of the optical beam of the VCSEL with increasing ageing time. Based on numerical simulations, we demonstrated that the electrical degradation (increase in series resistance) is responsible for a larger current spreading which, in turn, increases the FWHM (full width half maximum) of the optical beam. We further evaluated the series resistance variation by aging four lasers with different oxide apertures. The results of this set of experiments showed that the electrical degradation is stronger as the oxide aperture is smaller, and mostly depends on the contribution of the top DBR resistance. Thanks to our analysis we proved that the use of a larger aperture can result in a better device reliability.

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氧化物孔径宽度对硅光子学 845 nm VCSEL 性能衰减的影响

我们首次分析了为硅光子学（SiPh）应用而设计的 845 nm VCSEL 的衰减与氧化物孔径的函数关系。首先，我们通过收集恒定电流应力下的 EL 图像来评估器件的光学退化。实验结果表明，随着老化时间的延长，VCSEL 的光束扩散速度加快。根据数值模拟，我们证明电退化（串联电阻增加）是导致电流扩散增大的原因，而电流扩散增大反过来又会增加光束的 FWHM（全宽半最大值）。我们通过对四个具有不同氧化物孔径的激光器进行老化，进一步评估了串联电阻的变化。这组实验的结果表明，当氧化物孔径越小，电气性能衰减越强，而且主要取决于顶部 DBR 电阻的贡献。通过分析，我们证明使用较大的孔径可以提高设备的可靠性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of Selected Topics in Quantum Electronics 工程技术-工程：电子与电气

CiteScore

10.60

自引率

2.00%

发文量

212

审稿时长

3 months

期刊介绍： Papers published in the IEEE Journal of Selected Topics in Quantum Electronics fall within the broad field of science and technology of quantum electronics of a device, subsystem, or system-oriented nature. Each issue is devoted to a specific topic within this broad spectrum. Announcements of the topical areas planned for future issues, along with deadlines for receipt of manuscripts, are published in this Journal and in the IEEE Journal of Quantum Electronics. Generally, the scope of manuscripts appropriate to this Journal is the same as that for the IEEE Journal of Quantum Electronics. Manuscripts are published that report original theoretical and/or experimental research results that advance the scientific and technological base of quantum electronics devices, systems, or applications. The Journal is dedicated toward publishing research results that advance the state of the art or add to the understanding of the generation, amplification, modulation, detection, waveguiding, or propagation characteristics of coherent electromagnetic radiation having sub-millimeter and shorter wavelengths. In order to be suitable for publication in this Journal, the content of manuscripts concerned with subject-related research must have a potential impact on advancing the technological base of quantum electronic devices, systems, and/or applications. Potential authors of subject-related research have the responsibility of pointing out this potential impact. System-oriented manuscripts must be concerned with systems that perform a function previously unavailable or that outperform previously established systems that did not use quantum electronic components or concepts. Tutorial and review papers are by invitation only.