Deep n-well dtscr with fast turn-on speed for low-voltage esd protection applications

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2024-08-02 DOI:10.1016/j.microrel.2024.115475

Boyang Ma, Shupeng Chen, Ruibo Chen, Hongxia Liu, Shulong Wang, Zeen Han

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引用次数: 0

Abstract

In this article, a novel low trigger and fast turn on electrostatic discharge (ESD) protection device, called deep N-well diode-triggered silicon-controlled-rectifier (DNWTSCR), is proposed for 1.8 V I/O protection applications in the advanced 40-nm CMOS technology. By incorporating a deep N-well parasitic diode path into the conventional DTSCR, the triggering diodes-string gets prolonged and possesses higher impedance without area penalty. Owing to this, more current will branch to the inherent SCR during the operation, and consequently the DNWTSCR will present improved turn-on characteristics. The ESD characteristics of the proposed DNWTSCR and the conventional DTSCR were evaluated by Transmission Line Pulse (TLP) and Very Fast TLP (VFTLP). As results, the DNWTSCR presents a low trigger voltage of 3.4 V and an extremely fast turn-on time of 0.85 ns, which are 41 % and 51 % lower than the conventional DTSCR, respectively. Moreover, the TCAD simulation results agree well with the transmission line pulse testing results, further confirming that the proposed DNWTSCR can be widely used as an effective ESD protection device for high-speed ICs.

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深 n 孔 dtscr，开启速度快，适用于低电压 ESD 保护应用

本文提出了一种新型低触发和快速开启静电放电（ESD）保护器件，称为深 N 孔二极管触发式硅控整流器（DNWTSCR），适用于先进的 40 纳米 CMOS 技术中的 1.8 V I/O 保护应用。通过在传统的 DTSCR 中加入深 N 孔寄生二极管路径，触发二极管串得以延长，并在不增加面积的情况下具有更高的阻抗。因此，在工作期间会有更多电流流向固有的可控硅，从而使 DNWTSCR 具有更好的开启特性。通过传输线脉冲 (TLP) 和极快速 TLP (VFTLP) 评估了所提出的 DNWTSCR 和传统 DTSCR 的 ESD 特性。结果显示，DNWTSCR 具有 3.4 V 的低触发电压和 0.85 ns 的超快导通时间，分别比传统 DTSCR 低 41% 和 51%。此外，TCAD 仿真结果与传输线脉冲测试结果非常吻合，进一步证实了所提出的 DNWTSCR 可广泛用作高速集成电路的有效 ESD 保护器件。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.