Design and Comparative Analysis of Ferroelectric Nanowire with Dielectric HfO2 and Al2O3 for Low-Power Applications

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Electronic Materials Pub Date : 2024-08-03 DOI:10.1007/s11664-024-11332-1

Mohit Kumar, Tarun Chaudhary, Balwinder Raj

引用次数: 0

Abstract

This paper reports the design of ferroelectric nanowires using HfO₂ and Al₂O₃. Ferroelectric nanowire transistors have drawn considerable attention recently because of their potential for use in low-power devices and non-volatile memory systems. In this work, the drain current, acceptor concentrations, and electric field are analyzed. The results obtained for the proposed device structure highlight the relevance of Al₂O₃- and HfO₂-based nanowires as potential materials for the development of cutting-edge nanotechnology and materials science advancements. The proposed device structure has I_ON = 3.8 × 10⁻⁵ using HfO₂ and I_ON = 3.48 × 10⁻⁴ using Al₂O₃. The significant improvements in the results make ferroelectric nanowire interesting for the scientific and research community working in this area.

Abstract Image

查看原文本刊更多论文

用于低功耗应用的带有介电质 HfO2 和 Al2O3 的铁电纳米线的设计和比较分析

本文报告了利用 HfO2 和 Al2O3 设计铁电纳米线的情况。由于铁电纳米线晶体管在低功耗器件和非易失性存储器系统中的应用潜力，最近引起了广泛关注。本研究分析了漏极电流、受体浓度和电场。针对拟议器件结构得出的结果突出表明，基于 Al2O3 和 HfO2 的纳米线是开发尖端纳米技术和材料科学进步的潜在材料。所提议的器件结构使用 HfO2 时的 ION = 3.8 × 10-5，使用 Al2O3 时的 ION = 3.48 × 10-4。结果的明显改善使铁电纳米线成为该领域科研界关注的焦点。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Journal of Electronic Materials 工程技术-材料科学：综合

CiteScore

4.10

自引率

4.80%

发文量

693

审稿时长

3.8 months

期刊介绍： The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications. Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field. A journal of The Minerals, Metals & Materials Society.