Impedance Spectroscopy and Electrical Properties of Novel Structure of Au/AlCu/SiO2/p-Si/Al

Abstract

Au/AlCu/SiO2/p-Si/Al is a novel assembly synthesized by the technology of liquid phase epitaxy (LPE). Using impedance spectroscopy the electric and dielectric properties of these structures have been characterized as a function of voltage, frequency, and temperature. All real parts of the impedance curve at different temperatures, voltages, and frequencies formed small peaks at higher frequencies. At low and mid frequencies, the real part of impedance Z' is independent of frequencies. For all curves of Z՝՝, the imaginary parts of the impedance at dissimilar voltages, frequencies, and temperatures have positive values at low frequencies. At lnf = 5 the Z'' have negative values and create peaks. The growth of Z'' value was consistent with decline temperatures, at high frequencies, the Z'' formed peaks with positive and negative values. The Col-Col diagram, at different temperatures and voltages, was investigated. The conventional Cheung and Nord methods were applied to study the electric factors such as series resistance Rs, barrier height and ideality factor n.