Revisiting row hammer: A deep dive into understanding and resolving the issue

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2024-07-24 DOI:10.1016/j.microrel.2024.115467

Haibin Wang , Xiaoshuai Peng , Zhi Liu , Xiaofeng Huang , Lian'gen Qiu , Tan Li , Baoyao Yang , Yuzheng Chen

引用次数: 0

Abstract

Row hammer is a vulnerability in Dynamic Random Access Memory (DRAM) chips, whereby repeatedly accessing a specific row in the DRAM chip may cause bit flips in memory cells. As the DRAM fabrication process scales down, DRAM chips are becoming more susceptible to row hammer. To gain a comprehensive understanding of the row hammer vulnerability, we investigate its mechanisms, attack patterns, simulation methodology and tools, as well as mitigation techniques. We also summarize several impact factors of row hammer, including timing parameters, temperature, DRAM fabrication process, radiation effects, voltage level, and data patterns. Finally, we point out future research directions, such as exploring how radiation effects and temperature impact row hammer, modeling and simulation methodology under advanced technology nodes, and deep-learning-based mitigation solutions.

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重新审视排锤：深入了解并解决问题

行锤是动态随机存取存储器（DRAM）芯片中的一个漏洞，反复访问 DRAM 芯片中的特定行可能会导致内存单元的位翻转。随着 DRAM 制造工艺的缩减，DRAM 芯片越来越容易受到行锤的影响。为了全面了解行锤漏洞，我们研究了其机制、攻击模式、模拟方法和工具以及缓解技术。我们还总结了行锤的几个影响因素，包括时序参数、温度、DRAM 制造工艺、辐射效应、电压水平和数据模式。最后，我们指出了未来的研究方向，如探索辐射效应和温度如何影响行锤、先进技术节点下的建模和仿真方法，以及基于深度学习的缓解解决方案。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.