Influence of 700 KeV O3+ ion implantation on current transport properties of Cr/p-GaN SBD’s

IF 1.1 4区物理与天体物理 Q3 NUCLEAR SCIENCE & TECHNOLOGY

Radiation Effects and Defects in Solids Pub Date : 2024-07-16 DOI:10.1080/10420150.2024.2369135

Santosh Kumar, Rakshith Huligerepura Shankaregowda, Vinay Kumar Mariswamy, Asokan Kandasami, V. Rajagopal Reddy, Krishnaveni Sannathammegowda

引用次数: 0

Abstract

In the present study we show a detailed investigation into the influence of 700 KeV O3+ ion implantation in Cr/p-GaN SBDs on electrical characteristics / current transport properties. Also the dama...

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700 KeV O3+ 离子植入对 Cr/p-GaN SBD 电流传输特性的影响

在本研究中，我们详细研究了在 Cr/p-GaN SBD 中进行 700 KeV O3+ 离子注入对电气特性/电流传输特性的影响。此外，我们还研究了...

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来源期刊

Radiation Effects and Defects in Solids 物理-核科学技术

CiteScore

1.60

自引率

20.00%

发文量

107

审稿时长

4 months

期刊介绍： The Journal covers a wide range of topics under radiation and plasma sciences. The range of contributions encompasses: radiation physics; radiochemistry, radiobiology and physical effects of medical irradiation, including research on radiative cell degeneration; optical, electrical and mechanical effects of radiation, and their secondary effects such as diffusion and particle emission from surfaces; plasma techniques and plasma phenomena. On plasma science the Journal covers all areas of fusion, space and low temperature plasmas.