Magnetoelectric effect of PZT/Ni50.5Mn27.9Ga21.6/PZT laminate composite: design and measurement

Ana Maria Schönhöbel, J. Gutiérrez, M. Barandiarán
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Abstract

In this work we designed an experimental setup based on a double coil and an electromagnet to measure the magnetoelectric effect of a PZT/Ni50.5Mn27.9Ga21.6/PZT laminate composite, made of a bulk single crystal of Ni50.5Mn27.9Ga21.6 shape memory alloy. The shape memory alloy showed a martensitic transformation at 298 K, a Curie temperature at 368 K and room temperature magnetization of 2.87 uB/f.u. Strain response was found to be between 3% and 4% for magnetic fields greater than or equal to 4 kOe. As for the magnetoelectric effect, the induced voltages were moderate, increasing linearly with the frequency. There was a slight change in the magnetoelectric response with the DC applied magnetic field. For low frequencies, the magnetoelectric voltage was on the order of 10 mV and for higher frequencies about 50 mV. The best magnetoelectric coefficient (215 mV/cmOe) was obtained under an AC field of 1 Oe and a static magnetic field of 7 kOe.
PZT/Ni50.5Mn27.9Ga21.6/PZT 层压复合材料的磁电效应:设计与测量
在这项工作中,我们设计了一套基于双线圈和电磁铁的实验装置,用于测量 PZT/Ni50.5Mn27.9Ga21.6/PZT 层压复合材料的磁电效应,该复合材料由块状单晶 Ni50.5Mn27.9Ga21.6 形状记忆合金制成。形状记忆合金在 298 K 时发生马氏体转变,居里温度为 368 K,室温磁化率为 2.87 uB/f.u。至于磁电效应,感应电压适中,随频率线性增加。磁电响应随直流外加磁场而略有变化。低频时,磁电电压约为 10 mV,高频时约为 50 mV。最佳磁电系数(215 mV/cmOe)是在 1 Oe 的交流磁场和 7 kOe 的静态磁场下获得的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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