Pulsed laser deposition and structural analysis of Ba2Ti6O13 epitaxial thin film on the (210) surface of SrTiO3 single crystal

Ryuta Kono, Kohei Hieda, T. Tokunaga, Ryoma Tamura, Ryotaro Masamura, yasuyuki hikita, Kazuhiko Kano, Takahisa Yamamoto
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Abstract

A single crystalline thin film of Ba2Ti6O13 was grown on the (210) surface of a SrTiO3 single-crystal substrate by pulsed laser deposition. Scanning transmission electron microscopy shows that the Ba2Ti6O13 thin film grew epitaxially with the a-plane, and the b-/c-axes of Ba2Ti6O13 parallel to the (210) plane and the [00-1]/[-120] directions of SrTiO3, respectively. The electrical conductance of the Ba2Ti6O13 film was approximately one order larger than that of reduced SrTiO3-δ single crystal with oxygen deficiency of roughly δ = 0.05. Electronic structure calculations predict that δ is an n-type degenerate semiconductor with spin-split states primarily of Ti 3d orbital.
SrTiO3 单晶 (210) 表面上的 Ba2Ti6O13 外延薄膜的脉冲激光沉积和结构分析
通过脉冲激光沉积法在 SrTiO3 单晶衬底的 (210) 表面生长出了 Ba2Ti6O13 单晶薄膜。扫描透射电子显微镜显示,Ba2Ti6O13 薄膜是外延生长的,Ba2Ti6O13 的 a 轴和 b/c 轴分别平行于 (210) 平面和 SrTiO3 的 [00-1]/[-120] 方向。Ba2Ti6O13 薄膜的电导率比缺氧约为δ = 0.05 的还原型 SrTiO3-δ 单晶大约大一个数量级。电子结构计算表明,δ 是一种 n 型变质半导体,主要具有钛 3d 轨道的自旋分裂态。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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