Magnetic Field and Moisture Diffusivity Effects on Photo-Elasto-Thermodiffusion Waves in Excited Semiconductor Materials

IF 2.8 3区材料科学 Q3 CHEMISTRY, PHYSICAL

Silicon Pub Date : 2024-07-05 DOI:10.1007/s12633-024-03042-4

Tarek E. I. Nassar, Merfat H. Raddadi, Khaled Lotfy

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Abstract

In this article, a novel model was studied that explains the interaction between the equations governing the photo-thermoelasticity theory in the case of the presence of the diffusion of moisture of the semiconductor medium with the electromagnetic field. The photo-thermoelasticity theory is used to investigate the photothermal excitation process for an elastic semiconductor medium in a one-dimensional deformation. This article discusses the effect of the magnetic field on conductive moisture diffusivity. The coupling interactions between magneto-thermo-elastic stresses and moisture diffusivity are investigated. According to some initial conditions, the governing equations are investigated using the Laplace transform technique to calculate the numerical solution of the key physical field contribution in the Laplace domain. The basic quantities for the process in the Laplace domain are calculated using all mechanical stresses, thermal conditions, and plasma boundary surface conditions. To obtain complete solutions in the time domain for the main problems, the numerical method approach is used to invert the Laplace transform. Some comparisons are made under the influence of different parameters to show the wave propagation of the main fields.

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磁场和水分扩散率对受激半导体材料中光-电-热扩散波的影响

本文研究了一个新模型，该模型解释了在存在半导体介质水分扩散与电磁场的情况下，制约光热弹性理论的方程之间的相互作用。光热弹性理论用于研究弹性半导体介质在一维变形中的光热激发过程。本文讨论了磁场对导电水分扩散率的影响。研究了磁热弹应力与湿气扩散率之间的耦合相互作用。根据一些初始条件，利用拉普拉斯变换技术研究了支配方程，计算了拉普拉斯域中关键物理场贡献的数值解。利用所有机械应力、热条件和等离子体边界表面条件计算拉普拉斯域中过程的基本量。为了获得主要问题在时域中的完整解，采用了数值方法来反演拉普拉斯变换。在不同参数的影响下进行了一些比较，以显示主要场的波传播情况。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Silicon CHEMISTRY, PHYSICAL-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

5.90

自引率

20.60%

发文量

685

审稿时长

>12 weeks

期刊介绍： The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.