{"title":"Proton energy suitable for backscattering spectrometry in nitrogen composition analysis of transition metal nitride thin films on silicon substrate","authors":"Yasuhito Gotoh, Tomoaki Osumi","doi":"10.1016/j.nimb.2024.165445","DOIUrl":null,"url":null,"abstract":"<div><p>A proton energy suitable for elastic backscattering spectrometry for nitrogen composition analysis of transition metal nitride thin films on a silicon substrate was suggested. Conditions under which the backscattering yield from nitrogen is as high as possible, and that from silicon as low as possible is preferred. The ratio of the backscattering yield of the nitrogen at the surface to that of the silicon in the same channel, was calculated for the proton energies between 1.0 and 2.5 MeV with an interval of 20 keV. It was shown that a proton energy of 1.62–1.64 MeV is the most suitable not only considering the above-mentioned ratio, but also with regard to the energy dependence of the scattering cross section and an easy check of the proton energy during the measurements.</p></div>","PeriodicalId":19380,"journal":{"name":"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms","volume":"554 ","pages":"Article 165445"},"PeriodicalIF":1.4000,"publicationDate":"2024-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0168583X24002155","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"INSTRUMENTS & INSTRUMENTATION","Score":null,"Total":0}
引用次数: 0
Abstract
A proton energy suitable for elastic backscattering spectrometry for nitrogen composition analysis of transition metal nitride thin films on a silicon substrate was suggested. Conditions under which the backscattering yield from nitrogen is as high as possible, and that from silicon as low as possible is preferred. The ratio of the backscattering yield of the nitrogen at the surface to that of the silicon in the same channel, was calculated for the proton energies between 1.0 and 2.5 MeV with an interval of 20 keV. It was shown that a proton energy of 1.62–1.64 MeV is the most suitable not only considering the above-mentioned ratio, but also with regard to the energy dependence of the scattering cross section and an easy check of the proton energy during the measurements.
期刊介绍：
Section B of Nuclear Instruments and Methods in Physics Research covers all aspects of the interaction of energetic beams with atoms, molecules and aggregate forms of matter. This includes ion beam analysis and ion beam modification of materials as well as basic data of importance for these studies. Topics of general interest include: atomic collisions in solids, particle channelling, all aspects of collision cascades, the modification of materials by energetic beams, ion implantation, irradiation - induced changes in materials, the physics and chemistry of beam interactions and the analysis of materials by all forms of energetic radiation. Modification by ion, laser and electron beams for the study of electronic materials, metals, ceramics, insulators, polymers and other important and new materials systems are included. Related studies, such as the application of ion beam analysis to biological, archaeological and geological samples as well as applications to solve problems in planetary science are also welcome. Energetic beams of interest include atomic and molecular ions, neutrons, positrons and muons, plasmas directed at surfaces, electron and photon beams, including laser treated surfaces and studies of solids by photon radiation from rotating anodes, synchrotrons, etc. In addition, the interaction between various forms of radiation and radiation-induced deposition processes are relevant.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
