Tailoring the Structure, Optical and Shielding Characteristics of ZnMn2O4 Nanostructures through Sn-Doping

IF 1.8 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

ECS Journal of Solid State Science and Technology Pub Date : 2024-07-02 DOI:10.1149/2162-8777/ad5b86

Zein K. Heiba, M. M. Ghannam, Ali Badawi and Mohamed Bakr Mohamed

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Abstract

The current study aims to tailor the structure, optical and shielding characteristics of ZnMn2O4 nanostructures through Sn-doping. ZnMn2−xSnxO4 nanostructures were synthesized by the sol-gel technique. The sample containing 5% Sn exhibits the highest level of absorbance. ZnMn2−xSnxO4 system exhibits a maximum optical energy gap value of 2.55 eV when doped with 10% Sn, and a minimum optical energy gap value of 2.23 eV when doped with 5% Sn. The refractive index values of the samples containing 5 and 10% Sn are the highest in comparison to the other samples. The values of the non-linear optical parameters became maximum as x = 0.05. The radiation shielding constants were computed by Phy-X/PSD software. The half value length and tenth value length values reduced as ZnMn2O4 doped with Sn, implying that doped samples have better shielding capabilities than undoped ZnMn2O4. When compared to doped samples, ZnMn2O4 has the highest fast neutron removal cross-section value. ZnMn2-xSnxO4 samples demonstrate a greater rate of absorption for photons with lower energy as opposed to those with higher energy.

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通过掺杂锡调整 ZnMn2O4 纳米结构的结构、光学和屏蔽特性

本研究旨在通过掺杂锡来定制 ZnMn2O4 纳米结构的结构、光学和屏蔽特性。采用溶胶-凝胶技术合成了 ZnMn2-xSnxO4 纳米结构。含 5%锡的样品吸光度最高。当掺杂 10% 锡时，ZnMn2-xSnxO4 系统显示出 2.55 eV 的最大光学能隙值，而当掺杂 5% 锡时，则显示出 2.23 eV 的最小光学能隙值。与其他样品相比，含 5%和 10%锡的样品折射率值最高。当 x = 0.05 时，非线性光学参数值达到最大。辐射屏蔽常数由 Phy-X/PSD 软件计算得出。当 ZnMn2O4 掺杂 Sn 时，其半值长度和十值长度值减小，这意味着掺杂样品比未掺杂 ZnMn2O4 具有更好的屏蔽能力。与掺杂样品相比，ZnMn2O4 的快中子去除截面值最高。与能量较高的光子相比，ZnMn2-xSnxO4 样品对能量较低的光子的吸收率更高。

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来源期刊

ECS Journal of Solid State Science and Technology MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED

CiteScore

4.50

自引率

13.60%

发文量

455

期刊介绍： The ECS Journal of Solid State Science and Technology (JSS) was launched in 2012, and publishes outstanding research covering fundamental and applied areas of solid state science and technology, including experimental and theoretical aspects of the chemistry and physics of materials and devices. JSS has five topical interest areas: carbon nanostructures and devices dielectric science and materials electronic materials and processing electronic and photonic devices and systems luminescence and display materials, devices and processing.