Lifetime reliability modeling on EMC performance of digital ICs influenced by the environmental and aging constraints: A case study

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2024-06-24 DOI:10.1016/j.microrel.2024.115447

Jaber Al Rashid , Mohsen Koohestani , Laurent Saintis , Mihaela Barreau

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引用次数: 0

Abstract

This paper aims to develop the lifetime reliability model on electromagnetic compatibility (EMC) performance of the Atmel Attiny85 microcontroller integrated circuit (IC) chip samples, depending on the observed variation of the conducted immunity to the electromagnetic interference imposed by the combined influence of various environmental and aging (i.e., thermal and electrical voltage stress) constraints. A constant-stress accelerated degradation tests plan was designed and implemented by applying different constant thermal (i.e., 70 and 110 °C) and electrical voltage (i.e., 4 and 5 V) stress magnitude levels simultaneously in various multiple stress combinations. Direct power injection (DPI) conducted immunity tests were performed in nominal condition on all the programmed device under test (DUT) samples in both the fresh and aged states at various stress time duration. The best-fit EMC degradation paths were generated using regression analysis, followed by evaluating the pseudo time-to-failure ( $T T F$ ) data and estimating the unknown parameters of the developed degradation path model. The performance metrics for lifetime reliability were evaluated by combining the Weibull distribution function with the generalized Eyring accelerated life test model. The maximum likelihood estimation method was utilized to estimate the relevant reliability model parameters. The developed reliability model was found to have the capability to estimate the electromagnetic unreliability against the lifetime $T T F$ data of all the selected DUT samples with good precision and acceptable accuracy in both nominal and aging stress conditions. It is demonstrated that the non-failure probability of the DUT samples would remain at 1 for the first 1200 h, and that, under nominal conditions, the prediction of corresponding $T T F$ data for all of those IC samples would fluctuate between 1400 and 1600 h.

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受环境和老化约束影响的数字集成电路 EMC 性能的寿命可靠性建模：案例研究

本文旨在开发 Atmel Attiny85 微控制器集成电路 (IC) 芯片样品电磁兼容性 (EMC) 性能的寿命可靠性模型，该模型取决于在各种环境和老化（即热应力和电电压应力）限制因素的综合影响下对电磁干扰传导抗扰度的观察变化。设计并实施了一个恒定应力加速降解测试计划，在各种多重应力组合中同时施加不同的恒定热量（即 70 和 110 °C）和电电压（即 4 和 5 V）应力大小水平。在额定条件下，对所有被测设备（DUT）样品在新鲜和老化状态下进行了直接功率注入（DPI）抗扰度测试，应力持续时间各不相同。使用回归分析生成了最适合的 EMC 退化路径，随后评估了伪失效时间 (TTF) 数据，并估算了所开发退化路径模型的未知参数。通过将 Weibull 分布函数与广义艾林加速寿命测试模型相结合，对寿命可靠性的性能指标进行了评估。利用最大似然估计法估计了相关的可靠性模型参数。结果发现，所开发的可靠性模型能够根据所有选定 DUT 样品的寿命 TTF 数据估算电磁不可靠度，在标称和老化应力条件下都具有良好的精度和可接受的准确性。结果表明，在最初的 1200 小时内，DUT 样品的无故障概率将保持为 1，而在标称条件下，所有这些集成电路样品的相应 TTF 数据的预测值将在 1400 至 1600 小时之间波动。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.