Design of a hysteresis comparator with temperature compensation

Haojie Dai, Yunyang Gong, Yanling Li, Jiangping He, Yankun Xia
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Abstract

Utilizing 0.18μm CMOS process, a hysteresis comparator with temperature compensation has been devised. A compensating current is generated through two NMOS transistors operating in the linear region, thereby mitigating the temperature-dependent coefficients in the hysteresis voltage expression to achieve heightened precision in hysteresis voltage. The model is constructed using Cadence software, and simulation results reveal that the compensated hysteresis comparator exhibits an exceedingly low temperature coefficient. Specifically, with an average hysteresis voltage of 81.67mV, and a temperature range spanning from -40°C to 170°C, the hysteresis voltage undergoes a variation of 15mV, resulting in a temperature coefficient of 0.0714mV/°C.
设计带温度补偿的磁滞比较器
利用 0.18μm CMOS 工艺,我们设计出了一种具有温度补偿功能的磁滞比较器。补偿电流通过两个工作在线性区域的 NMOS 晶体管产生,从而减轻了滞后电压表达式中的温度相关系数,提高了滞后电压的精度。该模型使用 Cadence 软件构建,仿真结果表明,经过补偿的磁滞比较器具有极低的温度系数。具体来说,平均磁滞电压为 81.67mV,温度范围为 -40°C 至 170°C,磁滞电压变化幅度为 15mV,温度系数为 0.0714mV/°C。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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