A diagnostic strategy for IGBT open-circuit faults in modular multilevel converters based on improved diagnostic indices

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2024-06-15 DOI:10.1016/j.microrel.2024.115444

Hong Wu , Yue Wang , Yi Liu , Xuan Li , Runtian Li , Yufei Li

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引用次数: 0

Abstract

Capacitor voltage deviations between two submodules (SMs) are always used as the diagnostic index for the insulated gate bipolar transistor (IGBT) open-circuit fault diagnosis in modular multilevel converters (MMCs). However, it is difficult to determine when MMCs operate in different conditions. To solve this issue, this article proposes a diagnostic strategy for IGBT open-circuit faults in MMCs based on improved diagnostic indices. First, two diagnostic indices, i.e., the concept of the count of periods during which the switching function is fixed (CSF) and capacitor voltage sorting sequence number (CSN) are proposed. On this basis, fault detection is implemented by judging the changing trend of the CSN in the SM whose CSF is the highest. The remaining malfunctioning SMs are located in turns by a similar process to fault detection. The proposed diagnostic indices show consistent faulty characteristics under different operating conditions, thus avoiding readjusting the threshold according to different operating conditions. In this sense, the proposed strategy can be easily used and promoted in different operating scenarios. Experimental results in a hardware-in-the-loop (HIL) platform verify the effectiveness of the proposed strategy.

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基于改进诊断指数的模块化多电平转换器 IGBT 开路故障诊断策略

在模块化多电平转换器（MMC）中，两个子模块（SM）之间的电容电压偏差一直被用作绝缘栅双极晶体管（IGBT）开路故障诊断的指标。然而，很难确定 MMC 在不同条件下的运行情况。为解决这一问题，本文提出了一种基于改进诊断指数的 MMC 中 IGBT 开路故障诊断策略。首先，提出了两个诊断指标，即开关功能固定的周期计数（CSF）和电容器电压排序序列号（CSN）的概念。在此基础上，通过判断 CSF 最高的 SM 中 CSN 的变化趋势来实现故障检测。通过与故障检测类似的过程，轮流定位其余出现故障的 SM。所提出的诊断指数在不同的运行条件下显示出一致的故障特征，从而避免了根据不同的运行条件重新调整阈值。从这个意义上说，所提出的策略可以在不同的运行场景中轻松使用和推广。在硬件在环（HIL）平台上的实验结果验证了所提策略的有效性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.