2D THz spectroscopic investigation of ballistic conduction-band electron dynamics in InSb (Conference Presentation)

Sarah Houver, Lucas Huber, Matteo Savoini, Elsa Abreu, Steven L. Johnson
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Abstract

In semiconductors and semimetals, strong THz electric fields can induce a controlled coherent motion of the electrons in the conduction band, via ballistic excitation. In the first picoseconds after THz excitation, the nonlinearities induced by this coherent excitation prevail before more incoherent high field effects start dominating the nonlinear response. Disentangling these different nonlinear contributions with 2D THz spectroscopy, we follow the trajectory of the out-of-equilibrium electron population in low-bandgap semiconductor InSb and. We then extract information on the conduction band curvature and evaluate its anharmonicity and its anisotropy, close to the Gamma-point.
对 InSb 中弹道导带电子动力学的二维太赫兹光谱学研究(会议发言)
在半导体和半金属中,强太赫兹电场可通过弹道激励诱导导带中的电子产生受控的相干运动。在太赫兹激发后的最初几皮秒内,这种相干激发所诱发的非线性效应占主导地位,然后更多的非相干高场效应开始主导非线性响应。利用二维太赫兹光谱学来析出这些不同的非线性贡献,我们可以跟踪低带隙半导体铟硒化物(InSb)中非平衡态电子群的轨迹。然后,我们提取了导带曲率的信息,并评估了其接近伽马点的非谐波性及其各向异性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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