Continuous-Wave Lasing Characteristics of Ho :GdVO4 Crystal Under Diode-Pumping Architecture

Abstract

In this paper, we investigate the continuous-wave lasing characteristics of Ho :GdVO₄ crystal under diode-pumping conditions. Using a 1.0 at.%-doped crystal, we obtain the maximum output power equal to 9.0 W at 2047.9 nm, with an absorbed pump power of 28.2 W. The slope efficiency and optical efficiency measured with respect to the absorbed pump power are 50.7% and 31.9%, respectively. In addition, we estimate the beam quality factor at the maximum output level to be about 1.8.