Crystal Growth and Luminescence Properties of TbGa3(BO3)4 Crystals

IF 1.2 4区 化学 Q4 CHEMISTRY, INORGANIC & NUCLEAR
M. I. Rakhmanova, K. A. Kokh, N. G. Kononova, A. B. Kuznetsov
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引用次数: 0

Abstract

TbGa3(BO3)4 crystals were grown using the Bi2Mo3O12:B2O3:Tb2O3 flux, which decreases contamination of Bi in the resulting crystal. The produced compound crystallizes in the R32 space group with unit cell parameters: a = 9.4512(4) Å, c = 7.4532(2) Å. A strong green emission of the luminescence is primarily dominated by the 5D4 to 7F5 transition in Tb3+. Annealing these crystals in a hydrogen atmosphere at 800 °C causes a reduction in the luminescence efficiency. On the other hand, annealing in air results in the increment of QY up to the value of 38%.

Abstract Image

TbGa3(BO3)4 晶体的晶体生长和发光特性
摘要 利用Bi2Mo3O12:B2O3:Tb2O3通量生长出了TbGa3(BO3)4晶体,从而减少了晶体中的铋污染。所生成的化合物在 R32 空间群中结晶,其单胞参数为:a = 9.4512(4) Å,c = 7.4532(2) Å。在 800 °C 的氢气环境中退火会降低这些晶体的发光效率。另一方面,在空气中退火会使 QY 值增加到 38%。
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来源期刊
Journal of Structural Chemistry
Journal of Structural Chemistry 化学-无机化学与核化学
CiteScore
1.60
自引率
12.50%
发文量
142
审稿时长
8.3 months
期刊介绍: Journal is an interdisciplinary publication covering all aspects of structural chemistry, including the theory of molecular structure and chemical bond; the use of physical methods to study the electronic and spatial structure of chemical species; structural features of liquids, solutions, surfaces, supramolecular systems, nano- and solid materials; and the crystal structure of solids.
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