Ferroelectric behavior arising from polar topologies in epitaxially strained SrTiO3-δ ultrathin films

Abstract

In this work, we show that epitaxially strained SrTiO_3-δ thin films, grown by ion-beam sputtering onto (001)Nb:SrTiO₃ substrates, exhibit a ferroelectric behavior. At the atomic-scale, through high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) images, it was possible to identify the presence of polar nanoregions with non-trivial polar topological structures in the SrTiO_3-δ film, which are induced through oxygen vacancies. To further confirm the presence of strained regions with a polar structure, Raman spectroscopy and high-resolution X-ray diffraction were employed and it was possible to confirm the presence of a tetragonal structure in the SrTiO_3-δ film, with a tetragonality ratio (c/a) of 1.005. Scanning probe microscopy and macroscopic polarization-electric field hysteresis loops show ferroelectric behavior with maximum polarization of ∼1.5 μC/cm², remnant polarization of ∼0.4 μC/cm² and coercive field of ∼0.3 MV/cm. This work opens a window for exploring novel polar topological effects in sub-10 nm thin film materials for non-volatile memory application.