{"title":"Investigate the Electrical and Structural Characteristics of the Si-ZnO Diode","authors":"Ahmed Waled Kasim","doi":"10.21315/jps2024.35.1.2","DOIUrl":null,"url":null,"abstract":"Silicon-zinc oxide (Si-ZnO) junction has been prepared using the chemical bath technique. The zinc oxide layer was examined using different techniques, including X-ray spectroscopy and a UV-visible spectrophotometer. The ZnO film images show that the films are homogeneous with an average grain size of 70 nm, while the X-ray spectrum shows that the layers are amorphous with some crystalline phase peaks appearing between 2θ=20° and 35°, which belong to ZnO. Transmittance, absorbance and extinction coefficient were varied over the visible light wavelength range, and the energy gap of the films was about 2.6 eV. In both forward and reverse bias, the junction revealed diode characteristics. The influence of light on the current intensity was evident and reached about 240 mA compared to the current intensity in the dark state. Also, the current intensity of the diode increased at each applied voltage with the increase in the intensity of the light shining on it.","PeriodicalId":16757,"journal":{"name":"Journal of Physical Science","volume":null,"pages":null},"PeriodicalIF":1.2000,"publicationDate":"2024-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Physical Science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.21315/jps2024.35.1.2","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MULTIDISCIPLINARY SCIENCES","Score":null,"Total":0}
引用次数: 0
Abstract
Silicon-zinc oxide (Si-ZnO) junction has been prepared using the chemical bath technique. The zinc oxide layer was examined using different techniques, including X-ray spectroscopy and a UV-visible spectrophotometer. The ZnO film images show that the films are homogeneous with an average grain size of 70 nm, while the X-ray spectrum shows that the layers are amorphous with some crystalline phase peaks appearing between 2θ=20° and 35°, which belong to ZnO. Transmittance, absorbance and extinction coefficient were varied over the visible light wavelength range, and the energy gap of the films was about 2.6 eV. In both forward and reverse bias, the junction revealed diode characteristics. The influence of light on the current intensity was evident and reached about 240 mA compared to the current intensity in the dark state. Also, the current intensity of the diode increased at each applied voltage with the increase in the intensity of the light shining on it.
期刊介绍:
The aim of the journal is to disseminate latest scientific ideas and findings in the field of physical sciences among scientists in Malaysia and international regions. This journal is devoted to the publication of articles dealing with research works in Chemistry, Physics and Engineering. Review articles will also be considered. Manuscripts must be of scientific value and will be submitted to independent referees for review. Contributions must be written in English and must not have been published elsewhere.