Miniaturized IPD band pass filter with low insertion loss based on modified T-section for 5G applications

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-05-15 DOI:10.1002/jnm.3248

Qi Zhang, Yazi Cao, Gaofeng Wang

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引用次数: 0

Abstract

A miniaturized bandpass filter (BPF) with low insertion loss based on a modified T-section and a grounded transmission-zero resonator is proposed. The novel T-section consists of two resonators, which can achieve the bandpass performance with two transmission zeros (TZs) in the upper band. The grounded transmission-zero resonator can generate an extra transmission zero in the lower band. Therefore, high frequency selectivity can be achieved by the above three transmission zeros near the passband. The proposed BPF can achieve an insertion loss of 0.8 dB and a return loss of 22 dB covering 3.3–4.2 GHz, and the upper-stopband attenuation is better than 20 dB up to 12.5 GHz (3.3f₀). The proposed BPF with a miniaturized size of 1.2 mm × 0.5 mm × 0.3 mm have been fabricated using Si-based integrated passive devices (IPDs) technology and measured by on-wafer probing. The simulated and measured results of the proposed BPF are in reasonably good agreement.

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基于改进型 T 型截面的低插入损耗小型 IPD 带通滤波器，适用于 5G 应用

本文提出了一种基于改进型 T 型截面和接地透射零谐振器的小型低插入损耗带通滤波器（BPF）。新颖的 T 型截面由两个谐振器组成，可在高频段实现具有两个传输零点（TZ）的带通性能。接地透射零谐振器可以在低频段产生额外的透射零。因此，上述三个传输零点可以在通带附近实现高频选择性。所提出的 BPF 在 3.3-4.2 GHz 频率范围内的插入损耗为 0.8 dB，回波损耗为 22 dB，上频带衰减优于 20 dB，最高可达 12.5 GHz (3.3f0)。利用硅基集成无源器件（IPDs）技术制作了尺寸为 1.2 mm × 0.5 mm × 0.3 mm 的微型 BPF，并通过晶圆探测进行了测量。拟议 BPF 的模拟和测量结果相当吻合。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

International Journal of Numerical Modelling-Electronic Networks Devices and Fields 工程技术-工程：电子与电气

CiteScore

4.60

自引率

6.20%

发文量

101

审稿时长

>12 weeks

期刊介绍： Prediction through modelling forms the basis of engineering design. The computational power at the fingertips of the professional engineer is increasing enormously and techniques for computer simulation are changing rapidly. Engineers need models which relate to their design area and which are adaptable to new design concepts. They also need efficient and friendly ways of presenting, viewing and transmitting the data associated with their models. The International Journal of Numerical Modelling: Electronic Networks, Devices and Fields provides a communication vehicle for numerical modelling methods and data preparation methods associated with electrical and electronic circuits and fields. It concentrates on numerical modelling rather than abstract numerical mathematics. Contributions on numerical modelling will cover the entire subject of electrical and electronic engineering. They will range from electrical distribution networks to integrated circuits on VLSI design, and from static electric and magnetic fields through microwaves to optical design. They will also include the use of electrical networks as a modelling medium.