Mutation in pore-helix modulates interplay between filter gate and Ba2+ block in a Kcv channel pore

Noel Tewes, Beatrice Kubitzki, Flandrit Bytyqi, Nikola Metko, Sebastian Mach, Gerhard Thiel, O. Rauh
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Abstract

Tewes et al. use a simple K+ channel pore to examine filter gating. Voltage-dependent closings in pore-helix mutants can be explained by an elevated sensitivity to block by trace contaminations of Ba2+. This means that the dwell time of ions in the filter determines the closed times of the filter gate.
孔螺旋的突变可调节 Kcv 通道孔中滤波门和 Ba2+阻断之间的相互作用
Tewes 等人利用一个简单的 K+ 通道孔来研究滤波门控。在孔螺旋突变体中,电压依赖性关闭可以用对微量 Ba2+ 污染阻断的敏感性升高来解释。这意味着离子在滤过器中的停留时间决定了滤过门的关闭时间。
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